 | N/A | MT53B1024M32D4NQ-053 WT:C | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,019 | |
 | N/A | MT53B1024M32D4NQ-053 WT:C TR | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 157 | |
 | N/A | MT53B1024M32D4NQ-062 WT ES:C | Micron Technology Inc. | IC DRAM 32GBIT 1.6GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -30°C ~ 85°C (TC) | Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,479 | |
 | N/A | MT53B1024M32D4NQ-062 WT:C | Micron Technology Inc. | IC DRAM 32GBIT 1.6GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -30°C ~ 85°C (TC) | Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 368 | |
 | N/A | MT53B1024M32D4NQ-062 WT:C TR | Micron Technology Inc. | IC DRAM 32GBIT 1.6GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -30°C ~ 85°C (TC) | Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,165 | |
| N/A | N/A | MT53B1024M64D8PM-062 WT:D TR | Micron Technology Inc. | IC DRAM 64GBIT 1.6GHZ | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Memory Organization: 1G x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 719 | |
| N/A | N/A | MT53B512M64D4EZ-062 WT:B TR | Micron Technology Inc. | IC DRAM 32GBIT 1.6GHZ FBGA | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 670 | |
| N/A | N/A | MT53B512M64D4NH-062 WT:C | Micron Technology Inc. | IC DRAM 32GBIT 1.6GHZ 272WFBGA | DRAM Memory | 272-WFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 635 | |
| N/A | N/A | MT53B512M64D4NJ-062 WT:B TR | Micron Technology Inc. | IC DRAM 32GBIT 1.6GHZ 272WFBGA | DRAM Memory | 272-WFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 187 | |
 | N/A | MT53B512M64D4NK-053 WT ES:C | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 366WFBGA | DRAM Memory | 366-WFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 850 | |
 | N/A | MT53B512M64D4NK-053 WT ES:C TR | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 366WFBGA | DRAM Memory | 366-WFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 195 | |
 | N/A | MT53B512M64D4NK-053 WT:C | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 366WFBGA | DRAM Memory | 366-WFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 506 | |
 | N/A | MT53B512M64D4NK-053 WT:C TR | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 366WFBGA | DRAM Memory | 366-WFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 853 | |
 | N/A | MT53B512M64D4NK-062 WT ES:C | Micron Technology Inc. | IC DRAM 32GBIT 1.6GHZ 366WFBGA | DRAM Memory | 366-WFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,066 | |
 | N/A | MT53B512M64D4NK-062 WT:B TR | Micron Technology Inc. | IC DRAM 32GBIT 1.6GHZ 366WFBGA | DRAM Memory | 366-WFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,598 | |
 | N/A | MT53B512M64D4NK-062 WT:C TR | Micron Technology Inc. | IC DRAM 32GBIT 1.6GHZ 366WFBGA | DRAM Memory | 366-WFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 241 | |
| N/A | N/A | MT53B512M64D4NW-062 WT ES:D | Micron Technology Inc. | IC DRAM 32GBIT 1.6GHZ FBGA | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,187 | |
| N/A | N/A | MT53B512M64D4NW-062 WT:C TR | Micron Technology Inc. | IC DRAM 32GBIT 1.6GHZ FBGA | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,128 | |
| N/A | N/A | MT53B512M64D4NW-062 WT:D | Micron Technology Inc. | IC DRAM 32GBIT 1.6GHZ | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 731 | |
| N/A | N/A | MT53B512M64D4NZ-062 WT ES:D | Micron Technology Inc. | IC DRAM 32GBIT 1.6GHZ FBGA | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 812 | |