| N/A | N/A | MT53B512M64D4PV-053 WT:C TR | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ FBGA | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 711 | |
| N/A | N/A | MT53B512M64D4PV-062 WT ES:C TR | Micron Technology Inc. | IC DRAM 32GBIT 1.6GHZ FBGA | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 341 | |
| N/A | N/A | MT53B512M64D4TX-053 WT:C | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ FBGA | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 6 | |
| N/A | N/A | MT53B512M64D4TX-053 WT:C TR | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ FBGA | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 965 | |
| N/A | N/A | MT53B512M64D8HR-053 WT ES:B TR | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ FBGA | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,124 | |
| N/A | N/A | MT53D1024M32D4BD-053 WT ES:D | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ FBGA | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,074 | |
| N/A | N/A | MT53D1024M32D4BD-053 WT ES:D TR | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ FBGA | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 296 | |
| N/A | N/A | MT53D1024M32D4BD-053 WT:D | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ FBGA | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,013 | |
| N/A | N/A | MT53D1024M32D4BD-053 WT:D TR | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ FBGA | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,828 | |
 | N/A | MT53D1024M32D4DT-046 AAT ES:D | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -40°C ~ 105°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 106 | |
 | N/A | MT53D1024M32D4DT-046 AAT ES:D TR | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -40°C ~ 105°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,249 | |
 | N/A | MT53D1024M32D4DT-046 AAT:D | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -40°C ~ 105°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,342 | |
 | N/A | MT53D1024M32D4DT-046 AAT:D TR | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -40°C ~ 105°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 836 | |
 | N/A | MT53D1024M32D4DT-046 AAT:E | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -40°C ~ 105°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 544 | |
 | N/A | MT53D1024M32D4DT-046 AIT:D | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -40°C ~ 95°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 226 | |
 | N/A | MT53D1024M32D4DT-046 AIT:D TR | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -40°C ~ 95°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 423 | |
 | N/A | MT53D1024M32D4DT-046 AUT:D | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -40°C ~ 125°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,404 | |
 | N/A | MT53D1024M32D4DT-046 AUT:D TR | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -40°C ~ 125°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,177 | |
 | N/A | MT53D1024M32D4DT-046 AUT:E | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -40°C ~ 125°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 785 | |
 | N/A | MT53D1024M32D4DT-046 WT:D | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 94 | |