 | N/A | MT53D1024M32D4DT-046 WT:D TR | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 269 | |
 | | MT53D1024M32D4DT-053 AAT:D | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -40°C ~ 105°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 420 | |
 | N/A | MT53D1024M32D4DT-053 AAT:D TR | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -40°C ~ 105°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,648 | |
 | N/A | MT53D1024M32D4DT-053 AIT ES:D | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -40°C ~ 95°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,450 | |
 | N/A | MT53D1024M32D4DT-053 AIT:D | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -40°C ~ 95°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,165 | |
 | N/A | MT53D1024M32D4DT-053 AIT:D TR | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -40°C ~ 95°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 880 | |
 | N/A | MT53D1024M32D4DT-053 WT ES:D | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 757 | |
 | N/A | MT53D1024M32D4DT-053 WT:D | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 839 | |
 | N/A | MT53D1024M32D4DT-053 WT:D TR | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,123 | |
 | N/A | MT53D1024M32D4NQ-046 AAT ES 😀 | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -40°C ~ 105°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 859 | |
 | N/A | MT53D1024M32D4NQ-046 AAT:D TR | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -40°C ~ 105°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 305 | |
 | N/A | MT53D1024M32D4NQ-046 AIT ES:D | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -40°C ~ 95°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,069 | |
 | N/A | MT53D1024M32D4NQ-046 AIT:D | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -40°C ~ 95°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 882 | |
 | N/A | MT53D1024M32D4NQ-046 AIT:D TR | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -40°C ~ 95°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 169 | |
 | N/A | MT53D1024M32D4NQ-046 WT ES:D | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 186 | |
 | N/A | MT53D1024M32D4NQ-046 WT:D | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 942 | |
 | N/A | MT53D1024M32D4NQ-053 WT ES:D | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 759 | |
 | N/A | MT53D1024M32D4NQ-053 WT ES:D TR | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,183 | |
 | N/A | MT53D1024M32D4NQ-053 WT:D | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 362 | |
 | N/A | MT53D1024M32D4NQ-053 WT:D TR | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 415 | |