 | | MT53E1G32D2FW-046 AAT:A TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 105°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 1,514 | |
 | | MT53E1G32D2FW-046 AAT:B | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 105°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 165 | |
 | | MT53E1G32D2FW-046 AAT:B TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 105°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 1,036 | |
 | N/A | MT53E1G32D2FW-046 AAT:C | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 105°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 281 | |
 | N/A | MT53E1G32D2FW-046 AAT:C TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 105°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 1,202 | |
 | | MT53E1G32D2FW-046 AIT:A | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 95°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 288 | |
 | | MT53E1G32D2FW-046 AIT:A TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 95°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 486 | |
 | | MT53E1G32D2FW-046 AIT:B | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 95°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 212 | |
 | | MT53E1G32D2FW-046 AIT:B TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 95°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 1,279 | |
 | N/A | MT53E1G32D2FW-046 AIT:C | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 95°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 695 | |
 | N/A | MT53E1G32D2FW-046 AIT:C TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 95°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 38 | |
 | | MT53E1G32D2FW-046 AUT:A | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 125°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 1,760 | |
 | | MT53E1G32D2FW-046 AUT:A TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 125°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 146 | |
 | | MT53E1G32D2FW-046 AUT:B | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 125°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 620 | |
 | | MT53E1G32D2FW-046 AUT:B TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 125°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 1,386 | |
 | N/A | MT53E1G32D2FW-046 AUT:C | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 125°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 932 | |
 | N/A | MT53E1G32D2FW-046 AUT:C TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 125°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 931 | |
 | N/A | MT53E1G32D2FW-046 IT:A | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 95°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 1,601 | |
 | N/A | MT53E1G32D2FW-046 IT:A TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 95°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 197 | |
 | N/A | MT53E1G32D2FW-046 IT:B | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 95°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 301 | |