Integrated Circuits

Discover a comprehensive selection of high-performance integrated circuits (ICs). Our offerings include microcontrollers, microprocessors, FPGAs, and more, designed to deliver exceptional functionality and reliability. Click one of the categories below to explore our IC solutions.

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About Integrated Circuits

Integrated circuits (ICs) are essential components in modern electronic devices, combining multiple electronic components onto a single semiconductor substrate. These miniature electronic circuits perform a variety of functions, from simple logic gates to complex microprocessors. ICs are known for their small size, efficiency, reliability, and versatility, making them indispensable in a wide range of applications.

What Are Integrated Circuits?

Integrated circuits are semiconductor devices that integrate multiple electronic components—including transistors, resistors, and capacitors—onto a single silicon chip to perform computing, control, or signal processing functions.

Engineers use integrated circuits to deliver compact processing power, control electronic systems, and support applications in consumer electronics, embedded computing, and industrial technology. Integrated circuits often rely on complimentary circuit protection devices to prevent damage from voltage spikes and overcurrent conditions. Explore Suntsu’s portfolio of integrated circuits to source reliable components for your next circuit board or system design.

Types of Integrated Circuits We Offer

Microcontrollers

Microcontrollers are compact integrated circuits that combine a processor core, memory, and input/output interfaces onto a single chip. These devices function as the control unit within embedded electronic systems, allowing engineers to program and manage hardware operations.

Microcontrollers are widely used in consumer electronics, industrial automation, and IoT devices, where efficient processing power and low power consumption are required. Their integrated architecture simplifies circuit board design while enabling flexible system control.

Microprocessors

Microprocessors serve as the central processing unit of computing systems, executing instructions and performing data processing tasks within electronic devices. These integrated circuits contain complex architectures with billions of transistors, enabling high computational performance.

Engineers integrate microprocessors into embedded computing systems, networking equipment, and industrial controllers where advanced processing capabilities are required for machine learning, automation, and data-driven applications.

Field Programmable Gate Arrays (FPGAs)

Field Programmable Gate Arrays (FPGAs) are configurable integrated circuits designed to be programmed after manufacturing. These devices allow engineers to customize digital logic functions by configuring programmable interconnect structures and logic blocks.

FPGAs are commonly used in communications infrastructure, test and measurement equipment, and advanced electronic systems where flexible hardware acceleration and parallel processing are required.

How to Choose the Right Integrated Circuits

Processing Requirements: Determine the level of processing power needed based on the system’s computing workload, control tasks, or signal processing demands.

Application-Specific Functionality: Some designs benefit from application-specific integrated circuits that optimize performance for targeted workloads such as networking, automation, or machine learning.

IC Package and Board Compatibility: Ensure the selected IC package fits the circuit board layout and aligns with manufacturing and thermal requirements.

Power Consumption and System Efficiency: Embedded devices and portable electronics often require integrated circuits designed for efficient power management.

System Architecture and Interconnect Needs: Evaluate how the IC will communicate with other components through memory, peripherals, and interconnect interfaces within the broader electronic system.

Part Search

Total Products: 134,052
ImageData
Sheet
Part NumberManufacturerDescriptionCategoryDevice PackageVoltageOperating
Temp
Additional SpecificationsQtyGet A
Quote
MT53E1G32D2FW-046 AAT:A TRMT53E1G32D2FW-046 AAT:A TRMicron Technology Inc.IC DRAM 32GBIT PAR 200TFBGADRAM Memory200-TFBGA (10x14.5)1.06V ~ 1.17V-40°C ~ 105°C (TC)
Access Time:
N/A
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
1G x 32
Memory Size:
32 Gbit
Memory Type:
Volatile
Packaging:
200-TFBGA
Qualification:
AEC-Q100
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
18 ns
1,514
MT53E1G32D2FW-046 AAT:BMT53E1G32D2FW-046 AAT:BMicron Technology Inc.IC DRAM 32GBIT PAR 200TFBGADRAM Memory200-TFBGA (10x14.5)1.06V ~ 1.17V-40°C ~ 105°C (TC)
Access Time:
3.5 ns
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
1G x 32
Memory Size:
32 Gbit
Memory Type:
Volatile
Packaging:
200-TFBGA
Qualification:
AEC-Q100
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
18 ns
165
MT53E1G32D2FW-046 AAT:B TRMT53E1G32D2FW-046 AAT:B TRMicron Technology Inc.IC DRAM 32GBIT PAR 200TFBGADRAM Memory200-TFBGA (10x14.5)1.06V ~ 1.17V-40°C ~ 105°C (TC)
Access Time:
3.5 ns
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
1G x 32
Memory Size:
32 Gbit
Memory Type:
Volatile
Packaging:
200-TFBGA
Qualification:
AEC-Q100
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
18 ns
1,036
MT53E1G32D2FW-046 AAT:CN/AMT53E1G32D2FW-046 AAT:CMicron Technology Inc.IC DRAM 32GBIT PAR 200TFBGADRAM Memory200-TFBGA (10x14.5)1.06V ~ 1.17V-40°C ~ 105°C (TC)
Access Time:
3.5 ns
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
1G x 32
Memory Size:
32 Gbit
Memory Type:
Volatile
Packaging:
200-TFBGA
Qualification:
AEC-Q100
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
18 ns
281
MT53E1G32D2FW-046 AAT:C TRN/AMT53E1G32D2FW-046 AAT:C TRMicron Technology Inc.IC DRAM 32GBIT PAR 200TFBGADRAM Memory200-TFBGA (10x14.5)1.06V ~ 1.17V-40°C ~ 105°C (TC)
Access Time:
3.5 ns
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
1G x 32
Memory Size:
32 Gbit
Memory Type:
Volatile
Packaging:
200-TFBGA
Qualification:
AEC-Q100
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
18 ns
1,202
MT53E1G32D2FW-046 AIT:AMT53E1G32D2FW-046 AIT:AMicron Technology Inc.IC DRAM 32GBIT PAR 200TFBGADRAM Memory200-TFBGA (10x14.5)1.06V ~ 1.17V-40°C ~ 95°C (TC)
Access Time:
N/A
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
1G x 32
Memory Size:
32 Gbit
Memory Type:
Volatile
Packaging:
200-TFBGA
Qualification:
AEC-Q100
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
18 ns
288
MT53E1G32D2FW-046 AIT:A TRMT53E1G32D2FW-046 AIT:A TRMicron Technology Inc.IC DRAM 32GBIT PAR 200TFBGADRAM Memory200-TFBGA (10x14.5)1.06V ~ 1.17V-40°C ~ 95°C (TC)
Access Time:
N/A
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
1G x 32
Memory Size:
32 Gbit
Memory Type:
Volatile
Packaging:
200-TFBGA
Qualification:
AEC-Q100
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
18 ns
486
MT53E1G32D2FW-046 AIT:BMT53E1G32D2FW-046 AIT:BMicron Technology Inc.IC DRAM 32GBIT PAR 200TFBGADRAM Memory200-TFBGA (10x14.5)1.06V ~ 1.17V-40°C ~ 95°C (TC)
Access Time:
3.5 ns
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
1G x 32
Memory Size:
32 Gbit
Memory Type:
Volatile
Packaging:
200-TFBGA
Qualification:
AEC-Q100
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
18 ns
212
MT53E1G32D2FW-046 AIT:B TRMT53E1G32D2FW-046 AIT:B TRMicron Technology Inc.IC DRAM 32GBIT PAR 200TFBGADRAM Memory200-TFBGA (10x14.5)1.06V ~ 1.17V-40°C ~ 95°C (TC)
Access Time:
3.5 ns
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
1G x 32
Memory Size:
32 Gbit
Memory Type:
Volatile
Packaging:
200-TFBGA
Qualification:
AEC-Q100
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
18 ns
1,279
MT53E1G32D2FW-046 AIT:CN/AMT53E1G32D2FW-046 AIT:CMicron Technology Inc.IC DRAM 32GBIT PAR 200TFBGADRAM Memory200-TFBGA (10x14.5)1.06V ~ 1.17V-40°C ~ 95°C (TC)
Access Time:
3.5 ns
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
1G x 32
Memory Size:
32 Gbit
Memory Type:
Volatile
Packaging:
200-TFBGA
Qualification:
AEC-Q100
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
18 ns
695
MT53E1G32D2FW-046 AIT:C TRN/AMT53E1G32D2FW-046 AIT:C TRMicron Technology Inc.IC DRAM 32GBIT PAR 200TFBGADRAM Memory200-TFBGA (10x14.5)1.06V ~ 1.17V-40°C ~ 95°C (TC)
Access Time:
3.5 ns
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
1G x 32
Memory Size:
32 Gbit
Memory Type:
Volatile
Packaging:
200-TFBGA
Qualification:
AEC-Q100
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
18 ns
38
MT53E1G32D2FW-046 AUT:AMT53E1G32D2FW-046 AUT:AMicron Technology Inc.IC DRAM 32GBIT PAR 200TFBGADRAM Memory200-TFBGA (10x14.5)1.06V ~ 1.17V-40°C ~ 125°C (TC)
Access Time:
N/A
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
1G x 32
Memory Size:
32 Gbit
Memory Type:
Volatile
Packaging:
200-TFBGA
Qualification:
AEC-Q100
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
18 ns
1,760
MT53E1G32D2FW-046 AUT:A TRMT53E1G32D2FW-046 AUT:A TRMicron Technology Inc.IC DRAM 32GBIT PAR 200TFBGADRAM Memory200-TFBGA (10x14.5)1.06V ~ 1.17V-40°C ~ 125°C (TC)
Access Time:
N/A
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
1G x 32
Memory Size:
32 Gbit
Memory Type:
Volatile
Packaging:
200-TFBGA
Qualification:
AEC-Q100
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
18 ns
146
MT53E1G32D2FW-046 AUT:BMT53E1G32D2FW-046 AUT:BMicron Technology Inc.IC DRAM 32GBIT PAR 200TFBGADRAM Memory200-TFBGA (10x14.5)1.06V ~ 1.17V-40°C ~ 125°C (TC)
Access Time:
3.5 ns
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
1G x 32
Memory Size:
32 Gbit
Memory Type:
Volatile
Packaging:
200-TFBGA
Qualification:
AEC-Q100
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
18 ns
620
MT53E1G32D2FW-046 AUT:B TRMT53E1G32D2FW-046 AUT:B TRMicron Technology Inc.IC DRAM 32GBIT PAR 200TFBGADRAM Memory200-TFBGA (10x14.5)1.06V ~ 1.17V-40°C ~ 125°C (TC)
Access Time:
3.5 ns
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
1G x 32
Memory Size:
32 Gbit
Memory Type:
Volatile
Packaging:
200-TFBGA
Qualification:
AEC-Q100
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
18 ns
1,386
MT53E1G32D2FW-046 AUT:CN/AMT53E1G32D2FW-046 AUT:CMicron Technology Inc.IC DRAM 32GBIT PAR 200TFBGADRAM Memory200-TFBGA (10x14.5)1.06V ~ 1.17V-40°C ~ 125°C (TC)
Access Time:
3.5 ns
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
1G x 32
Memory Size:
32 Gbit
Memory Type:
Volatile
Packaging:
200-TFBGA
Qualification:
AEC-Q100
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
18 ns
932
MT53E1G32D2FW-046 AUT:C TRN/AMT53E1G32D2FW-046 AUT:C TRMicron Technology Inc.IC DRAM 32GBIT PAR 200TFBGADRAM Memory200-TFBGA (10x14.5)1.06V ~ 1.17V-40°C ~ 125°C (TC)
Access Time:
3.5 ns
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
1G x 32
Memory Size:
32 Gbit
Memory Type:
Volatile
Packaging:
200-TFBGA
Qualification:
AEC-Q100
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
18 ns
931
MT53E1G32D2FW-046 IT:AN/AMT53E1G32D2FW-046 IT:AMicron Technology Inc.IC DRAM 32GBIT PAR 200TFBGADRAM Memory200-TFBGA (10x14.5)1.06V ~ 1.17V-40°C ~ 95°C (TC)
Access Time:
N/A
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
1G x 32
Memory Size:
32 Gbit
Memory Type:
Volatile
Packaging:
200-TFBGA
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
18 ns
1,601
MT53E1G32D2FW-046 IT:A TRN/AMT53E1G32D2FW-046 IT:A TRMicron Technology Inc.IC DRAM 32GBIT PAR 200TFBGADRAM Memory200-TFBGA (10x14.5)1.06V ~ 1.17V-40°C ~ 95°C (TC)
Access Time:
N/A
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
1G x 32
Memory Size:
32 Gbit
Memory Type:
Volatile
Packaging:
200-TFBGA
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
18 ns
197
MT53E1G32D2FW-046 IT:BN/AMT53E1G32D2FW-046 IT:BMicron Technology Inc.IC DRAM 32GBIT PAR 200TFBGADRAM Memory200-TFBGA (10x14.5)1.06V ~ 1.17V-40°C ~ 95°C (TC)
Access Time:
3.5 ns
Clock Frequency:
2.133 GHz
Grade:
Automotive
Memory Format:
DRAM
Memory Interface:
Parallel
Memory Organization:
1G x 32
Memory Size:
32 Gbit
Memory Type:
Volatile
Packaging:
200-TFBGA
Qualification:
N/A
Technology:
SDRAM - Mobile LPDDR4X
Write Cycle Time Word Page:
18 ns
301

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