 | N/A | MT53E1G32D4NQ-046 WT:E TR | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ FBGA | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 104 | |
 | N/A | MT53E1G32D4NQ-046 WT:F | Micron Technology Inc. | IC DRAM 32GBIT 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.06V ~ 1.17V | -30°C ~ 85°C | Clock Frequency: 2.133 GHz Grade: Commercial (Extended) Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 491 | |
 | N/A | MT53E1G32D4NQ-046 WT:F TR | Micron Technology Inc. | IC DRAM 32GBIT 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.06V ~ 1.17V | -30°C ~ 85°C | Clock Frequency: 2.133 GHz Grade: Commercial (Extended) Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 802 | |
| N/A | N/A | MT53E1G32D4NQ-053 RS WT:J | Micron Technology Inc. | IC DRAM 32GBIT FBGA | DRAM Memory | N/A | N/A | N/A | Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 648 | |
| N/A | N/A | MT53E1G32D4NQ-053 RS WT:J TR | Micron Technology Inc. | IC DRAM 32GBIT FBGA | DRAM Memory | N/A | N/A | N/A | Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 117 | |
 | N/A | MT53E1G32D4NQ-053 WT:E | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ FBGA | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 861 | |
 | N/A | MT53E1G32D4NQ-053 WT:E TR | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ FBGA | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 995 | |
| N/A | N/A | MT53E1G64D4HJ-046 AAT:A | Micron Technology Inc. | IC DRAM 64GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | N/A | N/A | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 64 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: N/A | 1,235 | |
| N/A | N/A | MT53E1G64D4HJ-046 AAT:A TR | Micron Technology Inc. | IC DRAM 64GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | N/A | N/A | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 64 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: N/A | 798 | |
 | N/A | MT53E1G64D4HJ-046 AAT:C | Micron Technology Inc. | IC DRAM 64GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | 1.06V ~ 1.17V | -40°C ~ 105°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 64 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 20 | |
 | N/A | MT53E1G64D4HJ-046 AAT:C TR | Micron Technology Inc. | IC DRAM 64GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | 1.06V ~ 1.17V | -40°C ~ 105°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 64 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 850 | |
| N/A | N/A | MT53E1G64D4HJ-046 AIT:A | Micron Technology Inc. | IC DRAM 64GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | N/A | N/A | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 64 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: N/A | 404 | |
| N/A | N/A | MT53E1G64D4HJ-046 AIT:A TR | Micron Technology Inc. | IC DRAM 64GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | N/A | N/A | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 64 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: N/A | 669 | |
 | N/A | MT53E1G64D4HJ-046 AIT:C | Micron Technology Inc. | IC DRAM 64GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | 1.06V ~ 1.17V | -40°C ~ 95°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 64 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 650 | |
 | N/A | MT53E1G64D4HJ-046 AIT:C TR | Micron Technology Inc. | IC DRAM 64GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | 1.06V ~ 1.17V | -40°C ~ 95°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 64 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 273 | |
 | N/A | MT53E1G64D4HJ-046 AUT:C | Micron Technology Inc. | IC DRAM 64GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | 1.06V ~ 1.17V | -40°C ~ 125°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 64 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 264 | |
 | N/A | MT53E1G64D4HJ-046 AUT:C TR | Micron Technology Inc. | IC DRAM 64GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | 1.06V ~ 1.17V | -40°C ~ 125°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 64 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 75 | |
| N/A | N/A | MT53E1G64D4HJ-046 WT:A | Micron Technology Inc. | IC DRAM 64GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | N/A | N/A | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 64 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: N/A | 483 | |
| N/A | N/A | MT53E1G64D4HJ-046 WT:A TR | Micron Technology Inc. | IC DRAM 64GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | N/A | N/A | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 64 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: N/A | 1,192 | |
 | | MT53E1G64D4HJ-046 WT:C | Micron Technology Inc. | IC DRAM 64GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | 1.06V ~ 1.17V | -30°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 64 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 979 | |