 | | MT53E2G32D4DE-046 AIT:A | Micron Technology Inc. | IC DRAM 64GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 95°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 2G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 1,057 | |
 | | MT53E2G32D4DE-046 AIT:A TR | Micron Technology Inc. | IC DRAM 64GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 95°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 2G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 136 | |
 | N/A | MT53E2G32D4DE-046 AIT:C | Micron Technology Inc. | IC DRAM 64GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 95°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 2G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 1,709 | |
 | N/A | MT53E2G32D4DE-046 AIT:C TR | Micron Technology Inc. | IC DRAM 64GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 95°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 2G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 432 | |
 | N/A | MT53E2G32D4DE-046 AUT:C | Micron Technology Inc. | IC DRAM 64GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 125°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 2G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 648 | |
 | N/A | MT53E2G32D4DE-046 AUT:C TR | Micron Technology Inc. | IC DRAM 64GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 125°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 2G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 1,805 | |
 | N/A | MT53E2G32D4DE-046 WT:A | Micron Technology Inc. | IC DRAM 64GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -25°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 2G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 690 | |
 | N/A | MT53E2G32D4DE-046 WT:A TR | Micron Technology Inc. | IC DRAM 64GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -25°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 2G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 210 | |
 | N/A | MT53E2G32D4DE-046 WT:C | Micron Technology Inc. | IC DRAM 64GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -25°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 2G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 1,318 | |
 | N/A | MT53E2G32D4DE-046 WT:C TR | Micron Technology Inc. | IC DRAM 64GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -25°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 2G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 489 | |
 | N/A | MT53E2G32D4DT-046 AAT:A | Micron Technology Inc. | IC DRAM 64GBIT 2.133GHZ FBGA | DRAM Memory | N/A | 1.1V | -40°C ~ 105°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 2G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 36 | |
 | N/A | MT53E2G32D4DT-046 AAT:A TR | Micron Technology Inc. | IC DRAM 64GBIT 2.133GHZ FBGA | DRAM Memory | N/A | 1.1V | -40°C ~ 105°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 2G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 74 | |
 | N/A | MT53E2G32D4DT-046 AIT:A | Micron Technology Inc. | IC DRAM 64GBIT 2.133GHZ FBGA | DRAM Memory | N/A | 1.1V | -40°C ~ 95°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 2G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 990 | |
 | N/A | MT53E2G32D4DT-046 AIT:A TR | Micron Technology Inc. | IC DRAM 64GBIT 2.133GHZ FBGA | DRAM Memory | N/A | 1.1V | -40°C ~ 95°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 2G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 521 | |
 | N/A | MT53E2G32D4DT-046 WT ES:A | Micron Technology Inc. | IC DRAM 64GBIT 2.133GHZ FBGA QDP | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 2G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 665 | |
 | N/A | MT53E2G32D4DT-046 WT:A | Micron Technology Inc. | IC DRAM 64GBIT 2.133GHZ FBGA | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 2G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,191 | |
 | N/A | MT53E2G32D4DT-046 WT:A TR | Micron Technology Inc. | IC DRAM 64GBIT 2.133GHZ FBGA | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 2G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 740 | |
 | N/A | MT53E2G32D4NQ-046 WT:A | Micron Technology Inc. | IC DRAM 64GBIT 2.133GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 2G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 334 | |
 | N/A | MT53E2G32D4NQ-046 WT:A TR | Micron Technology Inc. | IC DRAM 64GBIT 2.133GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 2G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 222 | |
 | N/A | MT53E2G32D4NQ-046 WT:C | Micron Technology Inc. | IC DRAM 64GBIT 2.133GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 2G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 506 | |