 | | MT53E512M64D4HJ-046 AAT:D | Micron Technology Inc. | IC DRAM 32GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | N/A | N/A | Memory Interface: Parallel Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,132 | |
 | | MT53E512M64D4HJ-046 AAT:D TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | N/A | N/A | Memory Interface: Parallel Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,286 | |
 | | MT53E512M64D4HJ-046 AIT:D | Micron Technology Inc. | IC DRAM 32GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | 1.06V ~ 1.17V | -40°C ~ 95°C | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,205 | |
 | | MT53E512M64D4HJ-046 AIT:D TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | 1.06V ~ 1.17V | -40°C ~ 95°C | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 206 | |
 | | MT53E512M64D4HJ-046 AUT:D | Micron Technology Inc. | IC DRAM 32GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | 1.06V ~ 1.17V | -40°C ~ 125°C | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: N/A | 1,328 | |
 | | MT53E512M64D4HJ-046 AUT:D TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | 1.06V ~ 1.17V | -40°C ~ 125°C | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: N/A | 974 | |
 | | MT53E512M64D4HJ-046 WT:D TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 556WFBGA | DRAM Memory | N/A | N/A | N/A | Memory Interface: Parallel Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 519 | |
 | | MT53E512M64D4NK-046 WT:D | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 366WFBGA | DRAM Memory | 366-WFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 205 | |
 | | MT53E512M64D4NK-046 WT:D TR | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 366WFBGA | DRAM Memory | 366-WFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,453 | |
 | | MT53E512M64D4NK-053 WT:D | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 366WFBGA | DRAM Memory | 366-WFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 926 | |
 | | MT53E512M64D4NK-053 WT:D TR | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 366WFBGA | DRAM Memory | 366-WFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 534 | |
 | | MT53E512M64D4NW-046 IT:E | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 432VFBGA | DRAM Memory | 432-VFBGA (15x15) | 1.1V | -40°C ~ 95°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 841 | |
 | | MT53E512M64D4NW-046 IT:E TR | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 432VFBGA | DRAM Memory | 432-VFBGA (15x15) | 1.1V | -40°C ~ 95°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 653 | |
 | | MT53E512M64D4NW-046 WT:E | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 432VFBGA | DRAM Memory | 432-VFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 343 | |
 | | MT53E512M64D4NW-046 WT:E TR | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 432VFBGA | DRAM Memory | 432-VFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 37 | |
 | | MT53E512M64D4NW-053 WT:E | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 432VFBGA | DRAM Memory | 432-VFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,184 | |
 | | MT53E512M64D4NW-053 WT:E TR | Micron Technology Inc. | IC DRAM 32GBIT 1.866GHZ 432VFBGA | DRAM Memory | 432-VFBGA (15x15) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,185 | |
 | | MT80C31BH | Intel | 8-BIT, 8051 CPU, 12MHZ CQCC44 | Microcontrollers | 44-LDCC | N/A | -55°C ~ 125°C (TC) | Program Memory Type: ROMless Voltage – Supply (Vcc/Vdd): 4V ~ 6V Oscillator Type: External, Internal Operating Temperature: -55°C ~ 125°C (TC) Mounting Type: Surface Mount Supplier Device Package: 44-LDCC Package / Case: 44-LCC (J-Lead) | 177 | |
 | | MT80C51FB | Intel | 8-BIT, 8051 CPU, 12MHZ PQFP44 | Microcontrollers | N/A | N/A | N/A | N/A | 323 | |
 | N/A | MTFC32GAKAECN-5M AIT | Micron Technology Inc. | IC FLASH 256GBIT MMC 153VFBGA | Flash Memory | 153-VFBGA (11.5x13) | N/A | -40°C ~ 85°C (TA) | Memory Organization: 32G x 8 Write Cycle Time Word Page: N/A | 989 | |