 | N/A | MT53E2G32D4NQ-046 WT:C TR | Micron Technology Inc. | IC DRAM 64GBIT 2.133GHZ 200VFBGA | DRAM Memory | 200-VFBGA (10x14.5) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 2G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 585 | |
| N/A | N/A | MT53E2G32D8QD-046 WT:E | Micron Technology Inc. | IC DRAM 64GBIT 2.133GHZ FBGA | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 2G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,001 | |
| N/A | N/A | MT53E2G32D8QD-046 WT:E TR | Micron Technology Inc. | IC DRAM 64GBIT 2.133GHZ FBGA | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 2G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 95 | |
| N/A | N/A | MT53E2G32D8QD-053 WT:E | Micron Technology Inc. | IC DRAM 64GBIT 1.866GHZ FBGA | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 2G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,418 | |
| N/A | N/A | MT53E2G32D8QD-053 WT:E TR | Micron Technology Inc. | IC DRAM 64GBIT 1.866GHZ FBGA | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 1.866 GHz Memory Organization: 2G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 161 | |
 | | MT53E512M64D2HJ-046 AAT:B | Micron Technology Inc. | IC DRAM 32GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | 1.06V ~ 1.17V | -40°C ~ 105°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 1,069 | |
 | | MT53E512M64D2HJ-046 AAT:B TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | 1.06V ~ 1.17V | -40°C ~ 105°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 413 | |
 | | MT53E512M64D2HJ-046 AIT:B | Micron Technology Inc. | IC DRAM 32GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | 1.06V ~ 1.17V | -40°C ~ 95°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 807 | |
 | | MT53E512M64D2HJ-046 AIT:B TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | 1.06V ~ 1.17V | -40°C ~ 95°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 795 | |
 | | MT53E512M64D2HJ-046 AUT:B | Micron Technology Inc. | IC DRAM 32GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | 1.06V ~ 1.17V | -40°C ~ 125°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 1,153 | |
 | | MT53E512M64D2HJ-046 AUT:B TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | 1.06V ~ 1.17V | -40°C ~ 125°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 106 | |
 | | MT53E512M64D2HJ-046 WT:B | Micron Technology Inc. | IC DRAM 32GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | 1.06V ~ 1.17V | -25°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: 18 ns | 971 | |
 | | MT53E512M64D2HJ-046 WT:B TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | 1.06V ~ 1.17V | -25°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: 18 ns | 1,204 | |
 | | MT53E512M64D2NW-046 IT:B | Micron Technology Inc. | IC DRAM 32GBIT 432VFBGA | DRAM Memory | 432-VFBGA (15x15) | N/A | N/A | Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,298 | |
 | | MT53E512M64D2NW-046 WT:B | Micron Technology Inc. | IC DRAM 32GBIT 432VFBGA | DRAM Memory | 432-VFBGA (15x15) | N/A | N/A | Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 287 | |
 | | MT53E512M64D2NW-046 WT:B TR | Micron Technology Inc. | IC DRAM 32GBIT 432VFBGA | DRAM Memory | 432-VFBGA (15x15) | N/A | N/A | Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 306 | |
 | | MT53E512M64D2NZ-46 WT:B | Micron Technology Inc. | IC DRAM 32GBIT PAR 376WFBGA | DRAM Memory | 376-WFBGA (14x14) | 1.06V ~ 1.17V | -25°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: 18 ns | 516 | |
 | | MT53E512M64D2NZ-46 WT:B TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 376WFBGA | DRAM Memory | 376-WFBGA (14x14) | 1.06V ~ 1.17V | -25°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: 18 ns | 942 | |
| N/A | | MT53E512M64D2RR-046 WT:B | Micron Technology Inc. | IC DRAM 32GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | 1.06V ~ 1.17V | -25°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: 18 ns | 1,014 | |
| N/A | | MT53E512M64D2RR-046 WT:B TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | N/A | N/A | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 512M x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 147 | |