 | N/A | MT53E1G64D4HJ-046 WT:C TR | Micron Technology Inc. | IC DRAM 64GBIT PAR 556WFBGA | DRAM Memory | 556-WFBGA (12.4x12.4) | 1.06V ~ 1.17V | -30°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 64 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 440 | |
 | N/A | MT53E1G64D4NW-046 WT:C | Micron Technology Inc. | IC DRAM 64GBIT 432VFBGA | DRAM Memory | 432-VFBGA (15x15) | N/A | N/A | Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: N/A | 578 | |
 | N/A | MT53E1G64D4NW-046 WT:C TR | Micron Technology Inc. | IC DRAM 64GBIT 432VFBGA | DRAM Memory | 432-VFBGA (15x15) | N/A | N/A | Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: N/A | 1,662 | |
 | N/A | MT53E1G64D4NZ-046 WT:C | Micron Technology Inc. | IC DRAM 64GBIT PAR 376WFBGA | DRAM Memory | 376-WFBGA (14x14) | 1.06V ~ 1.17V | -25°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 64 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 353 | |
 | N/A | MT53E1G64D4NZ-046 WT:C TR | Micron Technology Inc. | IC DRAM 64GBIT PAR 376WFBGA | DRAM Memory | 376-WFBGA (14x14) | 1.06V ~ 1.17V | -25°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 64 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 812 | |
 | N/A | MT53E1G64D4NZ-46 WT:C | Micron Technology Inc. | IC DRAM 64GBIT PAR 376WFBGA | DRAM Memory | 376-WFBGA (14x14) | 1.06V ~ 1.17V | -25°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: 18 ns | 21 | |
| N/A | N/A | MT53E1G64D4SP-046 WT:C | Micron Technology Inc. | IC DRAM 64GBIT BGA | DRAM Memory | N/A | N/A | N/A | Memory Organization: 1G x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 462 | |
| N/A | N/A | MT53E1G64D4SP-046 WT:C TR | Micron Technology Inc. | IC DRAM 64GBIT BGA | DRAM Memory | N/A | N/A | N/A | Memory Organization: 1G x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,249 | |
| N/A | N/A | MT53E1G64D4SQ-046 AAT:A | Micron Technology Inc. | IC DRAM 64GBIT 2.133GHZ WFBGA | DRAM Memory | N/A | 1.1V | -40°C ~ 105°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 1G x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 786 | |
| N/A | N/A | MT53E1G64D4SQ-046 AAT:A TR | Micron Technology Inc. | IC DRAM 64GBIT 2.133GHZ WFBGA | DRAM Memory | N/A | 1.1V | -40°C ~ 105°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 1G x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,574 | |
| N/A | N/A | MT53E1G64D4SQ-046 AIT:A | Micron Technology Inc. | IC DRAM 64GBIT 2.133GHZ WFBGA | DRAM Memory | N/A | 1.1V | -40°C ~ 95°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 1G x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 295 | |
| N/A | N/A | MT53E1G64D4SQ-046 AIT:A TR | Micron Technology Inc. | IC DRAM 64GBIT 2.133GHZ WFBGA | DRAM Memory | N/A | 1.1V | -40°C ~ 95°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 1G x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 454 | |
| N/A | N/A | MT53E1G64D4SQ-046 WT:A | Micron Technology Inc. | IC DRAM 64GBIT 2.133GHZ WFBGA | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 1G x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,260 | |
| N/A | N/A | MT53E1G64D4SQ-046 WT:A TR | Micron Technology Inc. | IC DRAM 64GBIT 2.133GHZ WFBGA | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 1G x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 74 | |
 | N/A | MT53E1G64D8NW-046 WT:E | Micron Technology Inc. | IC DRAM 64GBIT 2.133GHZ FBGA | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 1G x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 5 | |
 | N/A | MT53E1G64D8NW-046 WT:E TR | Micron Technology Inc. | IC DRAM 64GBIT 2.133GHZ FBGA | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 1G x 64 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 863 | |
 | | MT53E2G32D4DE-046 AAT:A | Micron Technology Inc. | IC DRAM 64GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 105°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 2G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 178 | |
 | | MT53E2G32D4DE-046 AAT:A TR | Micron Technology Inc. | IC DRAM 64GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 105°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 2G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 295 | |
 | N/A | MT53E2G32D4DE-046 AAT:C | Micron Technology Inc. | IC DRAM 64GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 105°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 2G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 30 | |
 | N/A | MT53E2G32D4DE-046 AAT:C TR | Micron Technology Inc. | IC DRAM 64GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 105°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 2G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 65 | |