 | | MT53E1G32D2FW-046 IT:B TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -40°C ~ 95°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 302 | |
 | N/A | MT53E1G32D2FW-046 IT:C | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | N/A | N/A | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,410 | |
| N/A | N/A | MT53E1G32D2FW-046 IT:C TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | N/A | N/A | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 919 | |
 | N/A | MT53E1G32D2FW-046 WT:A | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -25°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 488 | |
 | N/A | MT53E1G32D2FW-046 WT:A TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -25°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4X Write Cycle Time Word Page: 18 ns | 221 | |
 | | MT53E1G32D2FW-046 WT:B | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -25°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: 18 ns | 578 | |
 | N/A | MT53E1G32D2FW-046 WT:B TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | 1.06V ~ 1.17V | -25°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: 18 ns | 937 | |
 | N/A | MT53E1G32D2FW-046 WT:C | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | N/A | N/A | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 164 | |
| N/A | N/A | MT53E1G32D2FW-046 WT:C TR | Micron Technology Inc. | IC DRAM 32GBIT PAR 200TFBGA | DRAM Memory | 200-TFBGA (10x14.5) | N/A | N/A | Clock Frequency: 2.133 GHz Memory Interface: Parallel Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 676 | |
 | N/A | MT53E1G32D2NP-046 WT:A | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 200WFBGA | DRAM Memory | 200-WFBGA (10x14.5) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 877 | |
 | N/A | MT53E1G32D2NP-046 WT:A TR | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 200WFBGA | DRAM Memory | 200-WFBGA (10x14.5) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 166 | |
 | N/A | MT53E1G32D2NP-046 WT:B | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 200WFBGA | DRAM Memory | 200-WFBGA (10x14.5) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 644 | |
 | N/A | MT53E1G32D2NP-046 WT:B TR | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ 200WFBGA | DRAM Memory | 200-WFBGA (10x14.5) | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 600 | |
| N/A | N/A | MT53E1G32D2NP-053 RS WT:A | Micron Technology Inc. | IC DRAM 32GBIT FBGA | DRAM Memory | N/A | N/A | N/A | Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,393 | |
| N/A | N/A | MT53E1G32D2NP-053 RS WT:A TR | Micron Technology Inc. | IC DRAM 32GBIT FBGA | DRAM Memory | N/A | N/A | N/A | Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 1,476 | |
| N/A | N/A | MT53E1G32D2NP-053 RS WT:B | Micron Technology Inc. | IC DRAM 32GBIT FBGA | DRAM Memory | N/A | N/A | N/A | Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 392 | |
| N/A | N/A | MT53E1G32D2NP-053 RS WT:B TR | Micron Technology Inc. | IC DRAM 32GBIT FBGA | DRAM Memory | N/A | N/A | N/A | Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 699 | |
| N/A | N/A | MT53E1G32D2NP-053 RS WT:C | Micron Technology Inc. | IC DRAM 32GBIT FBGA | DRAM Memory | N/A | N/A | N/A | Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 491 | |
| N/A | N/A | MT53E1G32D2NP-053 RS WT:C TR | Micron Technology Inc. | IC DRAM 32GBIT FBGA | DRAM Memory | N/A | N/A | N/A | Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 140 | |
 | N/A | MT53E1G32D4NQ-046 WT:E | Micron Technology Inc. | IC DRAM 32GBIT 2.133GHZ FBGA | DRAM Memory | N/A | 1.1V | -30°C ~ 85°C (TC) | Clock Frequency: 2.133 GHz Memory Organization: 1G x 32 Technology: SDRAM - Mobile LPDDR4 Write Cycle Time Word Page: N/A | 372 | |