 | N/A | AS4C32M16SB-7TCNTR | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 14 ns | 77 | |
 | N/A | AS4C32M16SB-7TIN | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 14 ns | 1,145 | |
 | N/A | AS4C32M16SB-7TINTR | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 14 ns | 1,234 | |
 | N/A | AS4C32M16SC-7TIN | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,138 | |
 | N/A | AS4C32M16SC-7TINTR | Alliance Memory, Inc. | IC DRAM 512MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,938 | |
 | N/A | AS4C32M8D1-5TCN | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 913 | |
 | N/A | AS4C32M8D1-5TCNTR | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 919 | |
 | N/A | AS4C32M8D1-5TIN | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,029 | |
 | N/A | AS4C32M8D1-5TINTR | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,116 | |
 | N/A | AS4C32M8SA-6TIN | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 576 | |
 | N/A | AS4C32M8SA-6TINTR | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 629 | |
 | N/A | AS4C32M8SA-7TCN | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 838 | |
 | N/A | AS4C32M8SA-7TCNTR | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 199 | |
 | N/A | AS4C4G8D4-62BCN | Alliance Memory, Inc. | DDR4, 32GB, 4G X 8, 1.2V, 78-BAL | DRAM Memory | 78-FBGA (7.5x11) | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Grade: Extended / Automotive-like Memory Interface: Parallel Memory Organization: 4G x 8 Write Cycle Time Word Page: N/A | 130 | |
 | N/A | AS4C4G8D4-62BCNTR | Alliance Memory, Inc. | DDR4, 32GB, 4G X 8, 1.2V, 78-BAL | DRAM Memory | 78-FBGA (7.5x11) | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Grade: Extended / Automotive-like Memory Interface: Parallel Memory Organization: 4G x 8 Write Cycle Time Word Page: N/A | 685 | |
 | N/A | AS4C4M16D1-5TCN | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 802 | |
 | N/A | AS4C4M16D1-5TCNTR | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,400 | |
 | N/A | AS4C4M16D1-5TIN | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 124 | |
 | N/A | AS4C4M16D1-5TINTR | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 42 | |
 | N/A | AS4C4M16D1A-5TANTR | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 66TSOP II | DRAM Memory | 66-TSOP II | 2.3V ~ 2.7V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 66-TSSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 762 | |