 | N/A | AS4C4M16SA-6TAN | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 2 ns | 1,913 | |
 | N/A | AS4C4M16SA-6TANTR | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 2 ns | 1,419 | |
 | N/A | AS4C4M16SA-6TCN | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 852 | |
 | N/A | AS4C4M16SA-6TCNTR | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,094 | |
 | N/A | AS4C4M16SA-6TIN | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 836 | |
 | N/A | AS4C4M16SA-6TINTR | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 691 | |
 | N/A | AS4C4M16SA-7BCN | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Write Cycle Time Word Page: N/A | 1,972 | |
 | N/A | AS4C4M16SA-7BCNTR | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Write Cycle Time Word Page: N/A | 182 | |
 | N/A | AS4C4M16SA-7TCN | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 971 | |
 | N/A | AS4C4M16SA-7TCNTR | Alliance Memory, Inc. | IC DRAM 64MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,690 | |
 | N/A | AS4C4M16SB-6TIN | Alliance Memory, Inc. | IC DRAM 64MBIT LVTTL 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 175 | |
 | N/A | AS4C4M16SB-6TINTR | Alliance Memory, Inc. | IC DRAM 64MBIT LVTTL 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 584 | |
 | N/A | AS4C4M32D1-5BCN | Alliance Memory, Inc. | IC DRAM 128MBIT PARALLEL 144BGA | DRAM Memory | 144-LFBGA (12x12) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: 12 ns | 1,692 | |
 | N/A | AS4C4M32D1-5BIN | Alliance Memory, Inc. | IC DRAM 128MBIT PARALLEL 144BGA | DRAM Memory | 144-LFBGA (12x12) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: 12 ns | 261 | |
 | | AS4C4M32D1A-5BCN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 144LFBGA | DRAM Memory | 144-LFBGA (12x12) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: 12 ns | 958 | |
 | | AS4C4M32D1A-5BCNTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 144LFBGA | DRAM Memory | 144-LFBGA (12x12) | 2.3V ~ 2.7V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: 12 ns | 475 | |
 | | AS4C4M32D1A-5BIN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 144LFBGA | DRAM Memory | 144-LFBGA (12x12) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: 12 ns | 764 | |
 | | AS4C4M32D1A-5BINTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 144LFBGA | DRAM Memory | 144-LFBGA (12x12) | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 32 Write Cycle Time Word Page: 12 ns | 1,584 | |
 | | AS4C4M32S-6BCN | Alliance Memory, Inc. | IC DRAM 128MBIT LVTTL 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 8M x 16 Write Cycle Time Word Page: N/A | 1,116 | |
 | | AS4C4M32S-6BCNTR | Alliance Memory, Inc. | IC DRAM 128MBIT LVTTL 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 4M x 32 Write Cycle Time Word Page: N/A | 443 | |