 | | AS4C8M16SA-6TIN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 73 | |
 | | AS4C8M16SA-6TINTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 928 | |
 | | AS4C8M16SA-7BCN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: 14 ns | 1,528 | |
 | | AS4C8M16SA-7BCNTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TFBGA | DRAM Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: 14 ns | 776 | |
 | | AS4C8M16SA-7TCN | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 14 ns | 553 | |
 | | AS4C8M16SA-7TCNTR | Alliance Memory, Inc. | IC DRAM 128MBIT PAR 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 14 ns | 1,188 | |
 | N/A | AS4C8M16SB-6TIN | Alliance Memory, Inc. | IC DRAM 128MBIT LVTTL 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 300 | |
 | N/A | AS4C8M16SB-6TINTR | Alliance Memory, Inc. | IC DRAM 128MBIT LVTTL 54TSOP II | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 304 | |
 | N/A | AS4C8M32MSB-6BIN | Alliance Memory, Inc. | IC DRAM 256MBIT PARALLEL 90FBGA | DRAM Memory | 90-FBGA (8x13) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Write Cycle Time Word Page: 15 ns | 1,200 | |
 | N/A | AS4C8M32MSB-6BINTR | Alliance Memory, Inc. | IC DRAM 256MBIT PARALLEL 90FBGA | DRAM Memory | 90-FBGA (8x13) | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Write Cycle Time Word Page: 15 ns | 97 | |
 | N/A | AS4C8M32S-6TIN | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,465 | |
 | N/A | AS4C8M32S-6TINTR | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 508 | |
 | N/A | AS4C8M32S-7TCN | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,168 | |
 | N/A | AS4C8M32S-7TCNTR | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 86TSOP II | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 600 | |
 | N/A | AS4C8M32SA-6BIN | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Write Cycle Time Word Page: 2 ns | 529 | |
 | N/A | AS4C8M32SA-6BINTR | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Write Cycle Time Word Page: 2 ns | 1,006 | |
 | N/A | AS4C8M32SA-7BCN | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Write Cycle Time Word Page: 2 ns | 1,459 | |
 | N/A | AS4C8M32SA-7BCNTR | Alliance Memory, Inc. | IC DRAM 256MBIT PAR 90TFBGA | DRAM Memory | 90-TFBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 32 Write Cycle Time Word Page: 2 ns | 1,565 | |
 | | AS83C196EA | Intel | 16-BIT, MROM, 8096 CPU, 40MHZ | Microcontrollers | 160-QFP | N/A | -40°C ~ 125°C (TA) | Program Memory Size: 8KB (8K x 8) Voltage – Supply (Vcc/Vdd): 4.5V ~ 5.5V Data Converters: A/D 16x10b Oscillator Type: External, Internal Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Supplier Device Package: 160-QFP | 654 | |
| N/A | N/A | AS87C196ENF8 | Intel | MICROCONTROLLER, 16 BIT, MCS96 C | Microcontrollers | N/A | N/A | N/A | Mounting Type: Surface Mount | 676 | |