Suntsu’s DRAM memory catalog offers high-performance volatile memory solutions for data-intensive computing, industrial automation, networking, and embedded systems. Whether you need high-speed DDR4, LPDDR, or legacy SDRAM chips, our extensive inventory helps engineers and purchasing managers secure reliable components with minimal lead times. Use our advanced part search tool to filter by density, speed, configuration, or manufacturer to find the exact DRAM solution that will keep your production line running smoothly.
DRAM Memory
Total Products: 3,054
| Image | Data Sheet | Part Number | Manufacturer | Description | Category | Device Package | Voltage | Operating Temp | Additional Specifications | Qty | Get A Quote |
|---|---|---|---|---|---|---|---|---|---|---|---|
| N/A | M13S128324A-6BIG2M | ESMT | 128Mb DDR SDRAM Ind. | DRAM Memory | 144-FBGA | 2.375V ~ 2.625V | -40°C – 85°C | Memory Size: 128 Mbit Clock Frequency: 166 MHz Write Cycle Time Word Page: 15 ns Access Time: 15 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 1M x 32 Memory Interface: Parallel Grade: Industrial Qualification: JEDEC Packaging: 144-FBGA | 506 | ||
| N/A | M13S2561616A-4BG2T | ESMT | 256Mb DDR SDRAM | DRAM Memory | 60-BGA | 2.3V ~ 2.7V | 0°C – 70°C | Memory Size: 256 Mbit Clock Frequency: 250 MHz Write Cycle Time Word Page: 15 ns Access Time: 10 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 4M x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 60-BGA | 467 | ||
| N/A | M13S2561616A-4BIG2T | ESMT | 256Mb DDR SDRAM Ind. | DRAM Memory | 60-BGA | 2.3V ~ 2.7V | -40°C – 85°C | Memory Size: 256 Mbit Clock Frequency: 250 MHz Write Cycle Time Word Page: 15 ns Access Time: 10 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 4M x 16 Memory Interface: Parallel Grade: Industrial Qualification: JEDEC Packaging: 60-BGA | 745 | ||
| N/A | M13S2561616A-4TG2T | ESMT | 256Mb DDR SDRAM | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | 0°C – 70°C | Memory Size: 256 Mbit Clock Frequency: 250 MHz Write Cycle Time Word Page: 15 ns Access Time: 10 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 4M x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 66-TSOPII | 1,651 | ||
| N/A | M13S2561616A-4TIG2T | ESMT | 256Mb DDR SDRAM Ind. | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | -40°C – 85°C | Memory Size: 256 Mbit Clock Frequency: 250 MHz Write Cycle Time Word Page: 15 ns Access Time: 10 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 4M x 16 Memory Interface: Parallel Grade: Industrial Qualification: JEDEC Packaging: 66-TSOPII | 1,110 | ||
| N/A | M13S2561616A-5BG2T | ESMT | 256Mb DDR SDRAM | DRAM Memory | 60-BGA | 2.3V ~ 2.7V | 0°C – 70°C | Memory Size: 256 Mbit Clock Frequency: 200 MHz Write Cycle Time Word Page: 15 ns Access Time: 15 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 4M x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 60-BGA | 894 | ||
| N/A | M13S2561616A-5BIG2T | ESMT | 256Mb DDR SDRAM Ind. | DRAM Memory | 60-BGA | 2.3V ~ 2.7V | -40°C – 85°C | Memory Size: 256 Mbit Clock Frequency: 200 MHz Write Cycle Time Word Page: 15 ns Access Time: 15 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 4M x 16 Memory Interface: Parallel Grade: Industrial Qualification: JEDEC Packaging: 60-BGA | 1,210 | ||
| N/A | M13S2561616A-5TG2T | ESMT | 256Mb DDR SDRAM | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | 0°C – 70°C | Memory Size: 256 Mbit Clock Frequency: 200 MHz Write Cycle Time Word Page: 15 ns Access Time: 15 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 4M x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 66-TSOPII | 15 | ||
| N/A | M13S2561616A-5TIG2T | ESMT | 256Mb DDR SDRAM Ind. | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | -40°C – 85°C | Memory Size: 256 Mbit Clock Frequency: 200 MHz Write Cycle Time Word Page: 15 ns Access Time: 15 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 4M x 16 Memory Interface: Parallel Grade: Industrial Qualification: JEDEC Packaging: 66-TSOPII | 625 | ||
| N/A | M13S2561616A-6BG2T | ESMT | 256Mb DDR SDRAM | DRAM Memory | 60-BGA | 2.3V ~ 2.7V | 0°C – 70°C | Memory Size: 256 Mbit Clock Frequency: 166 MHz Write Cycle Time Word Page: 15 ns Access Time: 15 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 4M x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 60-BGA | 355 | ||
| N/A | M13S2561616A-6BIG2T | ESMT | 256Mb DDR SDRAM Ind. | DRAM Memory | 60-BGA | 2.3V ~ 2.7V | -40°C – 85°C | Memory Size: 256 Mbit Clock Frequency: 166 MHz Write Cycle Time Word Page: 15 ns Access Time: 15 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 4M x 16 Memory Interface: Parallel Grade: Industrial Qualification: JEDEC Packaging: 60-BGA | 866 | ||
| N/A | M13S2561616A-6TG2T | ESMT | 256Mb DDR SDRAM | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | 0°C – 70°C | Memory Size: 256 Mbit Clock Frequency: 166 MHz Write Cycle Time Word Page: 15 ns Access Time: 15 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 4M x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 66-TSOPII | 784 | ||
| N/A | M13S2561616A-6TIG2T | ESMT | 256Mb DDR SDRAM Ind. | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | -40°C – 85°C | Memory Size: 256 Mbit Clock Frequency: 166 MHz Write Cycle Time Word Page: 15 ns Access Time: 15 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 4M x 16 Memory Interface: Parallel Grade: Industrial Qualification: JEDEC Packaging: 66-TSOPII | 887 | ||
| N/A | M13S5121632A-5TG2T | ESMT | 512Mb DDR SDRAM | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | 0°C – 70°C | Memory Size: 512 Mbit Clock Frequency: 200 MHz Write Cycle Time Word Page: 15 ns Access Time: 15 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 8M x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 66-TSOPII | 1,868 | ||
| N/A | M13S5121632A-5TIG2T | ESMT | 512Mb DDR SDRAM Ind. | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | -40°C – 85°C | Memory Size: 512 Mbit Clock Frequency: 200 MHz Write Cycle Time Word Page: 15 ns Access Time: 15 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 8M x 16 Memory Interface: Parallel Grade: Industrial Qualification: JEDEC Packaging: 66-TSOPII | 888 | ||
| N/A | M13S5121632A-6TG2T | ESMT | 512Mb DDR SDRAM | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | 0°C – 70°C | Memory Size: 512 Mbit Clock Frequency: 166 MHz Write Cycle Time Word Page: 15 ns Access Time: 15 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 8M x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 66-TSOPII | 461 | ||
| N/A | M13S5121632A-6TIG2T | ESMT | 512Mb DDR SDRAM Ind. | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | -40°C – 85°C | Memory Size: 512 Mbit Clock Frequency: 166 MHz Write Cycle Time Word Page: 15 ns Access Time: 15 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 8M x 16 Memory Interface: Parallel Grade: Industrial Qualification: JEDEC Packaging: 66-TSOPII | 399 | ||
| N/A | M13S64164A-4TG2C | ESMT | 64Mb DDR SDRAM | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | 0°C – 70°C | Memory Size: 64 Mbit Clock Frequency: 250 MHz Write Cycle Time Word Page: 15 ns Access Time: 10 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 1M x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 66-TSOPII | 502 | ||
| N/A | M13S64164A-5TG2C | ESMT | 64Mb DDR SDRAM | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | 0°C – 70°C | Memory Size: 64 Mbit Clock Frequency: 200 MHz Write Cycle Time Word Page: 15 ns Access Time: 15 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 1M x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 66-TSOPII | 88 | ||
| N/A | M13S64164A-6TG2C | ESMT | 64Mb DDR SDRAM | DRAM Memory | 66-TSOPII | 2.3V ~ 2.7V | 0°C – 70°C | Memory Size: 64 Mbit Clock Frequency: 166 MHz Write Cycle Time Word Page: 15 ns Access Time: 15 ns Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Organization: 1M x 16 Memory Interface: Parallel Grade: Commercial Qualification: JEDEC Packaging: 66-TSOPII | 1,266 |
About DRAM Memory
Dynamic Random-Access Memory (DRAM) is a type of high-density, volatile semiconductor memory designed for quick data access and low-latency processing. It requires a continuous power supply and a dynamic refresh cycle to maintain stored information. DRAM serves as the primary working memory in digital systems, enabling microprocessors and microcontrollers to efficiently read and write active data. The DRAM category encompasses various generations and form factors, including standard DDR SDRAM, low-power LPDDR for energy-sensitive mobile devices, and legacy DDR2 or DDR3 variants that are customized for long-lifecycle industrial applications.
Engineers evaluate key performance metrics when specifying DRAM chips, including clock speed, data rate, bus width, and operating temperature range, in order to maximize system throughput. These memory integrated circuits (ICs) are essential components in enterprise computing, telecommunications infrastructure, automotive infotainment, and industrial automation. Suntsu offers a comprehensive selection of reliable DRAM solutions that seamlessly integrate with advanced processors, field-programmable gate arrays (FPGAs), and other complementary memory components, ensuring optimal performance in demanding digital designs.
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