 | | IMC1B1A4C3A9A5E3A4A0000 | Intelligent Memory Ltd. | EMMC, 11.5X13 153 BALL, 8GB, -25 | eMMC Memory | 153-FBGA (11.5x13) | N/A | -25°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 1,181 | |
 | | IMC1B1A4C3A9A5I3A4A0000 | Intelligent Memory Ltd. | EMMC, 11.5X13 153 BALL, 8GB, -40 | eMMC Memory | 153-FBGA (11.5x13) | N/A | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 445 | |
 | N/A | IMC1B1A6C1A0A1I3A6A0000 | Intelligent Memory Ltd. | EMMC,5.1,153 BALL,32GB,-40C TO 8 | eMMC Memory | 153-FBGA (11.5x13) | N/A | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 318 | |
 | N/A | IMC1B1A8C1A0A1I3A8A0000 | Intelligent Memory Ltd. | EMMC,5.1,153 BALL,64GB,-40C TO 8 | eMMC Memory | 153-FBGA (11.5x13) | N/A | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 64G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 1,742 | |
 | | IMC1B1A8C2A2A1E3A6A0000 | Intelligent Memory Ltd. | EMMC, 11.5X13 153 BALL, 32GB, -2 | eMMC Memory | 153-FBGA (11.5x13) | N/A | -25°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 32G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 442 | |
 | | IMC1B1A8C2A2A1E3A8A0000 | Intelligent Memory Ltd. | EMMC, 11.5X13 153 BALL, 64GB, -2 | eMMC Memory | 153-FBGA (11.5x13) | N/A | -25°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 64G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 203 | |
 | | IME2532SDBETG-6I | Intelligent Memory Ltd. | ECC SDRAM, 256MB, 3.3V, 8MX32, 1 | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 8M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 417 | |
 | | IME5108SDBETG-75 | Intelligent Memory Ltd. | ECC SDRAM, 512MB, 3.3V, 64MX8, 1 | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 64M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 318 | |
 | | IME5108SDBETG-75I | Intelligent Memory Ltd. | ECC SDRAM, 512MB, 3.3V, 64MX8, 1 | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 64M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 233 | |
 | | IME5116SDBETG-75 | Intelligent Memory Ltd. | ECC SDRAM, 512MB, 3.3V, 32MX16, | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 987 | |
 | | IME5116SDBETG-75I | Intelligent Memory Ltd. | ECC SDRAM, 512MB, 3.3V, 32MX16, | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 1,150 | |
 | | IME5132SDBETG-6I | Intelligent Memory Ltd. | ECC SDRAM, 512MB, 3.3V, 16MX32, | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 16M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 635 | |
 | | IN80C186-20 | Advanced Micro Devices | IC MPU I186 20MHZ | Microprocessors | N/A | N/A | 0°C ~ 70°C (TA) | Number of Cores/Bus Width: 1 Core, 16-Bit Operating Temperature: 0°C ~ 70°C (TA) | 739 | |
 | | IN80C188-16/TR | Advanced Micro Devices | IC MPU I186 16MHZ | Microprocessors | N/A | N/A | 0°C ~ 70°C (TA) | Number of Cores/Bus Width: 1 Core, 16-Bit Operating Temperature: 0°C ~ 70°C (TA) | 1,217 | |
 | | IN87C51-1 | Advanced Micro Devices | 8-BIT, OTPROM, 8051 CPU | Microcontrollers | 44-PLCC (16.59x16.59) | 4.5V - 5.5V | -40°C – 85°C | Program Memory Size: 4KB (4K x 8) Mounting Type: Surface Mount | 578 | |
 | | IP80C88 | Renesas | IC MPU 5MHZ 40DIP | Microprocessors | 40-PDIP | N/A | -40°C ~ 85°C (TA) | Number of Cores/Bus Width: 1 Core, 16-Bit Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 40-DIP (0.600″, 15.24mm) Supplier Device Package: 40-PDIP | 1,079 | |
 | | IP80C88-2 | Renesas | IC MPU 8MHZ 40DIP | Microprocessors | 40-PDIP | N/A | -40°C ~ 85°C (TA) | Number of Cores/Bus Width: 1 Core, 16-Bit Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 40-DIP (0.600″, 15.24mm) Supplier Device Package: 40-PDIP | 1,191 | |
 | N/A | IS21EF04GP-BCLI | Integrated Silicon Solution Inc | 4GB, 153 BALL FBGA, 3.3V, BOOT P | Flash Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 4G x 8 Technology: FLASH - NAND (pSLC) Write Cycle Time Word Page: N/A | 1,812 | |
 | N/A | IS21EF04GP-BCLI-TR | Integrated Silicon Solution Inc | 4GB, 153 BALL FBGA, 3.3V, BOOT P | Flash Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 4G x 8 Technology: FLASH - NAND (pSLC) Write Cycle Time Word Page: N/A | 820 | |
 | N/A | IS21EF04GP-JCLI | Integrated Silicon Solution Inc | 4GB, 153 BALL FBGA, 3.3V, ROHS, | Flash Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 4G x 8 Technology: FLASH - NAND (pSLC) Write Cycle Time Word Page: N/A | 833 | |