 | N/A | IS21TF08G-JCLI-TR | Integrated Silicon Solution Inc | IC FLASH 64GBIT EMMC 153VFBGA | eMMC Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 902 | |
 | N/A | IS21TF08G-JQLI | Integrated Silicon Solution Inc | IC FLASH 64GBIT EMMC 100LFBGA | eMMC Memory | 100-LFBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TC) | Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 1,262 | |
 | N/A | IS21TF08G-JQLI-TR | Integrated Silicon Solution Inc | IC FLASH 64GBIT EMMC 100LFBGA | eMMC Memory | 100-LFBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 866 | |
 | | IS21TF32G-JCLI | Integrated Silicon Solution Inc | IC FLASH 256GBIT EMMC 153VFBGA | eMMC Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 32G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 212 | |
 | | IS21TF32G-JCLI-TR | Integrated Silicon Solution Inc | IC FLASH 256GBIT EMMC 153VFBGA | eMMC Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 32G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 294 | |
 | | IS21TF32G-JQLI | Integrated Silicon Solution Inc | IC FLASH 256GBIT EMMC 100LFBGA | eMMC Memory | 100-LFBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 32G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 1,974 | |
 | | IS21TF32G-JQLI-TR | Integrated Silicon Solution Inc | IC FLASH 256GBIT EMMC 100LFBGA | eMMC Memory | 100-LFBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 32G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 550 | |
 | | IS21TF64G-JCLI | Integrated Silicon Solution Inc | IC FLASH 512GBIT EMMC 153VFBGA | eMMC Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 432 | |
 | | IS21TF64G-JCLI-TR | Integrated Silicon Solution Inc | IC FLASH 512GBIT EMMC 153VFBGA | eMMC Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 1,011 | |
 | | IS21TF64G-JQLI | Integrated Silicon Solution Inc | IC FLASH 512GBIT EMMC 100LFBGA | eMMC Memory | 100-LFBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 114 | |
 | | IS21TF64G-JQLI-TR | Integrated Silicon Solution Inc | IC FLASH 512GBIT EMMC 100LFBGA | eMMC Memory | 100-LFBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 64G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 1,363 | |
 | N/A | IS22EF04GP-JCLA2 | Integrated Silicon Solution Inc | 4GB, 153 BALL FBGA, 3.3V, ROHS, | Flash Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 4G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 15 | |
| N/A | N/A | IS22EF04GP-JCLA2-TR | Integrated Silicon Solution Inc | 4GB, 153 BALL FBGA, 3.3V, ROHS, | Flash Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 4G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 520 | |
 | N/A | IS22EF04GP-JQLA2 | Integrated Silicon Solution Inc | 4GB, 100 BALL FBGA, 3.3V, ROHS, | Flash Memory | 100-LFBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 4G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 758 | |
| N/A | N/A | IS22EF04GP-JQLA2-TR | Integrated Silicon Solution Inc | 4GB, 100 BALL FBGA, 3.3V, ROHS, | Flash Memory | 100-LFBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 4G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,109 | |
 | N/A | IS22EF08G-JCLA2 | Integrated Silicon Solution Inc | IC FLASH 64MBIT EMMC 153FBGA | eMMC Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 591 | |
 | N/A | IS22EF08G-JCLA2-TR | Integrated Silicon Solution Inc | 8GB, 153 BALL FBGA, 3.3V, ROHS, | Flash Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 453 | |
 | N/A | IS22EF08G-JQLA2 | Integrated Silicon Solution Inc | IC FLASH 64MBIT EMMC 100FBGA | eMMC Memory | 100-LFBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,098 | |
 | N/A | IS22EF08G-JQLA2-TR | Integrated Silicon Solution Inc | 8GB, 100 BALL FBGA, 3.3V, ROHS, | Flash Memory | 100-LFBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 914 | |
 | N/A | IS22EF08GP-JCLA2 | Integrated Silicon Solution Inc | 8GB, 153 BALL FBGA, 3.3V, ROHS, | Flash Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 998 | |