 | N/A | IS42S16400N-6TL | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 708 | |
 | N/A | IS42S16400N-6TL-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 179 | |
 | N/A | IS42S16400N-6TLI | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 506 | |
 | N/A | IS42S16400N-6TLI-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 980 | |
 | N/A | IS42S16400N-7BL | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 4M x 16 Write Cycle Time Word Page: N/A | 249 | |
 | N/A | IS42S16400N-7BL-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 4M x 16 Write Cycle Time Word Page: N/A | 173 | |
 | N/A | IS42S16400N-7BLI | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 4M x 16 Write Cycle Time Word Page: N/A | 715 | |
 | N/A | IS42S16400N-7BLI-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 4M x 16 Write Cycle Time Word Page: N/A | 456 | |
 | N/A | IS42S16400N-7TL | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,579 | |
 | N/A | IS42S16400N-7TL-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 50 | |
 | N/A | IS42S16400N-7TLI | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,562 | |
 | N/A | IS42S16400N-7TLI-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 590 | |
 | | IS42S16800D-6T | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 488 | |
 | | IS42S16800D-6T-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 638 | |
 | | IS42S16800D-75EBL | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54MINIBGA | Memory | 54-MiniBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: N/A | 770 | |
 | | IS42S16800D-75EBL-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54MINIBGA | Memory | 54-MiniBGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: N/A | 1,079 | |
 | | IS42S16800D-75EBLI | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54MINIBGA | Memory | 54-MiniBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: N/A | 775 | |
 | | IS42S16800D-75EBLI-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54MINIBGA | Memory | 54-MiniBGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Write Cycle Time Word Page: N/A | 1,324 | |
 | | IS42S16800D-75ETL | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 277 | |
 | | IS42S16800D-75ETL-TR | Integrated Silicon Solution Inc | IC DRAM 128MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,567 | |