IS42S16800D-75ETL

The IS42S16800D-75ETL is a 128‑Mbit synchronous DRAM device organized as 8M × 16 with a parallel SDRAM interface. It implements a quad‑bank architecture and fully synchronous operation referenced to the rising clock edge for predictable, high‑speed burst transfers.

Engineered for systems that require 128‑Mbit parallel SDRAM capacity, the device delivers programmable burst sequencing and refresh modes alongside low access times and compact 54‑pin TSOP II packaging.

Key Features

• Memory Core  128 Mbit SDRAM organized as 8M × 16 with internal quad‑bank architecture to support interleaved bank operation and hidden precharge cycles.
• Performance  Supports a clock frequency up to 133 MHz with an access time from clock of 6.5 ns (CAS latency = 2) for fast burst read/write cycles.
• Burst and Timing  Programmable burst length (1, 2, 4, 8, full page) and programmable burst sequence (sequential/interleave). Programmable CAS latency (2 or 3 clocks) and burst termination options available.
• Refresh and Power Modes  Auto Refresh (CBR) and Self Refresh with programmable refresh periods; 4096 refresh cycles every 64 ms as specified in the datasheet.
• Interface  LVTTL compatible inputs/outputs with a parallel SDRAM interface for synchronous, clock‑referenced operation.
• Power  Operates over a 3.0 V to 3.6 V supply range; the device datasheet references 3.3 V VDD and VDDQ operation.
• Package & Temperature  Available in a 54‑pin TSOP II (0.400", 10.16 mm width) package. Rated operating temperature: 0°C to 70°C (TA).

Unique Advantages

• Low latency burst transfers: The combination of 6.5 ns access time and programmable CAS latency enables short read/write response times for burst operations.
• Flexible burst control: Programmable burst lengths and sequence modes let designers optimize throughput and address sequencing for a variety of memory access patterns.
• Banked architecture for throughput: Quad‑bank organization supports internal bank interleaving to hide precharge times and maintain continuous data flow during bursts.
• Synchronous LVTTL interface: Clock‑referenced inputs and LVTTL compatibility simplify timing integration with synchronous system designs.
• Compact board footprint: 54‑pin TSOP II package delivers a dense physical memory option for space‑constrained board layouts.

Why Choose IC DRAM 128MBIT PAR 54TSOP II?

The IS42S16800D-75ETL provides a clear specification set for designers needing a 128‑Mbit synchronous DRAM with predictable, clock‑referenced burst behavior. Its supported 133 MHz clock operation, programmable burst/timing features, and quad‑bank architecture make it suitable for designs that require controlled, high‑speed parallel memory access within the stated supply and temperature ranges.

Documentation and device timing parameters are available from the manufacturer's datasheet, allowing engineers to validate timing, refresh behavior and interface requirements during system integration and qualification.

If you would like pricing or lead‑time information, request a quote or submit an inquiry to obtain detailed procurement and availability options for the IS42S16800D-75ETL.