IS42S16800D-75EBLI

The IS42S16800D-75EBLI is a 128 Mbit synchronous DRAM (SDRAM) device organized as 8M × 16 with a parallel LVTTL interface. It uses a pipeline, fully synchronous architecture with internal quad-bank organization to support high-speed, burst-oriented memory transfers.

Designed for systems that require parallel SDRAM memory with programmable burst and timing behavior, this device offers selectable CAS latency, programmable burst length and sequence, and industrial temperature availability for applications operating from -40°C to 85°C.

Key Features

• Core / Architecture  Fully synchronous SDRAM with pipeline architecture and internal quad-bank structure to hide row access and precharge timing.
• Memory Organization & Capacity  128 Mbit capacity organized as 8M × 16 (2M ×16 ×4 banks) providing a parallel DRAM memory format.
• Performance & Timing  Specified for a 133 MHz clock frequency with access time as low as 6.5 ns; programmable CAS latency options (2 or 3 clocks) allow timing optimization.
• Burst & Transfer Control  Programmable burst lengths (1, 2, 4, 8, full page) and burst sequences (Sequential/Interleave); supports burst read/write and burst read/single write operations, with burst termination via burst stop or precharge.
• Refresh & Power Management  Auto Refresh and Self Refresh modes with 4096 refresh cycles every 64 ms; includes power-down and self-refresh features for power-saving operation.
• Interface & Signaling  LVTTL-compatible interface with all signals referenced to the positive clock edge for synchronous operation.
• Power Supply  Operates from a 3.0 V to 3.6 V supply (VDD/VDDQ 3.3 V specified in device documentation).
• Package & Temperature  Supplied in a 54-ball MiniBGA (8 × 13) package; industrial temperature range from -40°C to 85°C and lead-free availability noted in the device specification.

Typical Applications

• Industrial Systems  Memory for industrial equipment that requires synchronous parallel DRAM operation across an extended temperature range.
• Embedded Parallel Memory  Local memory expansion for embedded designs requiring 128 Mbit parallel SDRAM with programmable burst behavior and selectable CAS latency.
• High-Speed Burst Buffering  Buffering and burst transfer scenarios that benefit from programmable burst lengths, burst termination, and interleaved bank access.

Unique Advantages

• Synchronous, pipelined architecture: Enables high-speed, predictable data transfers with all signals referenced to the clock’s rising edge.
• Quad-bank organization: Internal bank structure hides row access/precharge timing to improve effective throughput during interleaved accesses.
• Flexible timing and burst control: Programmable CAS latency, burst length and burst sequence let designers tune performance for specific system timing requirements.
• Robust refresh and power modes: Auto Refresh and Self Refresh (4096 cycles/64 ms) plus power-down modes reduce housekeeping overhead and support power-sensitive designs.
• Industrial temperature and compact package: -40°C to 85°C rating combined with a 54-ball MiniBGA (8×13) package supports space-constrained, harsh-environment applications.

Why Choose IS42S16800D-75EBLI?

The IS42S16800D-75EBLI delivers a 128 Mbit parallel SDRAM option with synchronous, pipelined operation and a flexible feature set—programmable CAS latency, burst control, and robust refresh modes—that helps engineers balance throughput and timing requirements. Its quad-bank internal architecture and LVTTL interface provide deterministic behavior for burst-oriented memory designs.

This device is well suited to designs that require a compact, industrial-temperature SDRAM solution operating at a 3.0–3.6 V supply range and supporting 133 MHz clocking with low access times. It offers configuration flexibility and package density for space-constrained systems that demand reliable synchronous DRAM performance.

For pricing, availability, or to request a quote for the IS42S16800D-75EBLI, submit a request with your quantity and delivery requirements and a product specialist will respond with a formal quote.