IS42S16800D-75EBL

The IS42S16800D-75EBL is a 128 Mbit synchronous DRAM (SDRAM) device organized as 8M × 16 with a quad-bank architecture. It is designed for 3.3V memory systems and provides a fully synchronous, LVTTL-referenced interface for parallel memory implementations.

This device targets systems that require high-speed, burst-oriented memory access with internal bank interleaving, programmable burst behavior and on-chip refresh management.

Key Features

• Memory Core 128 Mbit SDRAM organized as 8M × 16 with a quad-bank internal configuration for concurrent bank operation and efficient row precharge handling.
• Performance Supports clock frequencies of 166, 143 and 133 MHz (device grade options). Typical access time from clock is 6.5 ns for the -75E grade and programmable CAS latency of 2 or 3 clocks.
• Burst and Addressing Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (Sequential or Interleave) with random column address capability every clock cycle.
• Refresh and Power Modes Auto Refresh (CBR) and Self Refresh with programmable refresh periods; 4096 refresh cycles every 64 ms are supported to maintain data integrity.
• Interface and Logic Levels LVTTL-compatible inputs/outputs and a parallel memory interface for standard system integration.
• Power Nominal 3.3V VDD/VDDQ operation with an operating supply range of 3.0 V to 3.6 V.
• Package and Temperature 54-ball MiniBGA (8 × 13) package in a compact 54-VFBGA form factor; operating temperature range 0°C to 70°C (TA). Lead-free availability noted in the device datasheet.

Typical Applications

• Parallel SDRAM systems — Deploy as a 128 Mbit synchronous DRAM component where a parallel LVTTL SDRAM interface is required.
• Memory expansion modules — Provide organized 8M × 16 memory for designs requiring quad-bank SDRAM capacity in a compact BGA footprint.
• High-speed buffering — Use where burst read/write capability and 133 MHz-class clocking with 6.5 ns access are needed for fast data paths.

Unique Advantages

• Synchronous quad-bank architecture: Internal bank structure and bank interleaving hide row access/precharge times to improve effective throughput.
• Flexible burst control: Programmable burst lengths and sequences enable tailoring of transfer behavior to system access patterns.
• Multiple timing grades: Available clock-frequency grades (166, 143, 133 MHz) and selectable CAS latencies (2 or 3) provide design flexibility for timing and performance trade-offs.
• On-chip refresh management: Auto Refresh and Self Refresh modes with 4096 refresh cycles/64 ms reduce external refresh control complexity.
• Compact BGA package: 54-ball MiniBGA (8×13) reduces PCB area while providing robust soldered connections for dense system designs.
• LVTTL compatibility: Logic-level compatibility simplifies interfacing with standard 3.3V system logic.

Why Choose IS42S16800D-75EBL?

The IS42S16800D-75EBL combines a 128 Mbit SDRAM core with synchronous, LVTTL-referenced operation and a quad-bank architecture to deliver predictable, burst-oriented memory performance. Its supported timing grades and programmable burst/CAS settings make it adaptable to designs that require specific clocking and latency profiles.

This device is well suited for designs that require a compact BGA package, standard 3.3V operation, on-chip refresh features and flexible burst behavior—offering a focused memory solution for engineers optimizing board area and memory timing.

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