IS42S16800D-6T-TR

The IS42S16800D-6T-TR is a 128 Mbit synchronous DRAM (SDRAM) device from Integrated Silicon Solution Inc (ISSI), organized as 8M × 16 with a parallel memory interface. It uses a fully synchronous, pipeline architecture with internal bank structure to support high-speed burst-oriented data transfers.

This device is suitable for designs requiring a mid-density parallel SDRAM implemented in a compact 54‑pin TSOP II package, offering programmable burst control, refresh management, and LVTTL-compatible signaling.

Key Features

• Core Architecture Fully synchronous SDRAM with pipeline architecture and internal quad-bank organization to support high-speed burst accesses and bank interleaving.
• Memory Density & Organization 128 Mbit total capacity, organized as 8M × 16 (2M × 16 × 4 banks internally).
• Performance Rated for 166 MHz clock frequency (‑6 device) with access time of 5.4 ns at CAS latency = 3; programmable CAS latency options (2 or 3 clocks).
• Burst & Addressing Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence (Sequential / Interleave); supports random column address every clock cycle and burst termination commands.
• Refresh & Power Management Auto Refresh (CBR) and Self Refresh with programmable refresh periods; supports 4096 refresh cycles every 64 ms to maintain data integrity.
• Power VDD and VDDQ nominally 3.3 V; specified operating supply range 3.0 V to 3.6 V.
• Interface LVTTL‑compatible inputs and outputs with parallel memory interface for straightforward integration into existing 3.3 V systems.
• Package & Temperature 54‑pin TSOP II (0.400", 10.16 mm width) package; operating temperature 0°C to 70°C (TA). Datasheet indicates lead‑free availability and industrial temperature availability variants.

Typical Applications

• Parallel SDRAM subsystems Where a 128 Mbit parallel memory device is required for mid-density system memory or buffering.
• High-speed buffering Use in designs that benefit from synchronous burst transfers and low access times to support fast read/write bursts.
• Space-constrained PCBs Applications requiring a compact 54‑pin TSOP II package to minimize PCB area while providing parallel SDRAM capacity.

Unique Advantages

• High-frequency, low-latency operation: 166 MHz clock rating and 5.4 ns access time at CAS‑3 reduce latency for burst transfers.
• Flexible burst control: Programmable burst length and sequence give designers control over throughput and access patterns.
• Banked architecture for throughput: Internal quad‑bank organization enables bank interleaving to hide precharge times and improve sustained throughput.
• Integrated refresh management: Auto and self‑refresh modes with programmable refresh periods simplify memory maintenance and power management.
• Compact footprint: 54‑pin TSOP II package provides a small, industry-standard form factor for board-level integration.
• Common 3.3 V system compatibility: LVTTL signaling and 3.0–3.6 V supply range align with standard 3.3 V platforms.

Why Choose IS42S16800D-6T-TR?

The IS42S16800D-6T-TR delivers a balanced combination of mid-density capacity, synchronous burst performance, and flexible memory control in a compact TSOP II package. Its programmable CAS latency, burst options, and refresh features provide designers with the control needed to tune memory behavior for specific system bandwidth and latency requirements.

With nominal 3.3 V operation, LVTTL interface compatibility, and datasheet-supported lead‑free and industrial temperature availability options, this SDRAM is suited to designs that require a standardized parallel memory solution with clear electrical and timing characteristics from a recognized memory manufacturer.

Request a quote or submit an inquiry for IS42S16800D-6T-TR to receive pricing, availability, and lead-time information for your project.