IS42S16800D-75ETL-TR

The IS42S16800D-75ETL-TR is a 128‑Mbit synchronous DRAM (SDRAM) device manufactured by ISSI. It is organized as 8M × 16 with a quad‑bank internal architecture and a parallel LVTTL interface, designed for high‑speed burst‑oriented data transfers using a pipelined, fully synchronous interface.

This device targets applications that require predictable, clock‑aligned memory access with programmable burst options, selectable CAS latency, and built‑in refresh mechanisms to maintain data integrity during operation and standby.

Key Features

• Memory Core  128‑Mbit SDRAM organized as 8M × 16 (IS42S16800D), internally configured as four banks for interleaved access and improved throughput.
• Synchronous, pipelined operation  All signals are referenced to the positive edge of the clock for deterministic timing and high‑speed burst transfers.
• Clock and performance  Designed for operation at frequencies including 133 MHz (‑75E timing), with an access time from clock of 6.5 ns at CAS‑2 on the ‑75E option.
• Programmable burst control  Programmable burst length (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleaved) for flexible data transfer patterns.
• CAS latency options  Programmable CAS latency of 2 or 3 clocks to match system timing requirements.
• Refresh and power modes  Auto Refresh and Self Refresh with programmable refresh periods (4096 refresh cycles every 64 ms) and a power‑down mode to manage power and data retention.
• Interface  LVTTL compatible inputs/outputs and parallel memory interface for straightforward integration with LVTTL logic systems.
• Package and temperature  54‑lead TSOP II package (0.400", 10.16 mm width) with an operating temperature range of 0°C to 70°C (TA).
• System reliability features  Internal bank architecture and self‑timed row precharge (auto‑precharge) to hide row access/precharge latency and support continuous burst operation.

Typical Applications

• High‑speed buffer memory  Used where pipeline architecture and burst transfers are required for temporary data storage and throughput smoothing between subsystems.
• Memory modules and add‑in boards  Suitable for integration on memory expansion modules that require a compact 54‑TSOP II footprint and LVTTL interface.
• Digital systems requiring synchronous DRAM  Applicable to systems that need clock‑referenced, burst‑oriented DRAM with programmable CAS latency and refresh control.

Unique Advantages

• Synchronous pipeline architecture: Enables deterministic, high‑speed burst transfers by aligning all signals to the rising clock edge.
• Flexible burst and latency control: Programmable burst lengths and CAS latency let designers match memory behavior to system timing and throughput needs.
• Quad‑bank interleaving: Internal bank organization hides row access and precharge times to maintain continuous data flow during interleaved accesses.
• Built‑in refresh management: Auto Refresh and Self Refresh with 4096 cycles every 64 ms reduce external refresh handling and support reliable data retention.
• Compact package: 54‑TSOP II package provides a small footprint for space‑constrained board designs while preserving standard pinout and signal access.
• LVTTL compatibility: Direct compatibility with LVTTL logic levels simplifies interface design with common digital systems.

Why Choose IS42S16800D-75ETL-TR?

The IS42S16800D-75ETL-TR delivers 128‑Mbit of synchronous DRAM capacity with configurable burst behavior, selectable CAS latency, and internal quad‑bank architecture that together provide predictable, high‑speed burst transfers and efficient handling of row precharge. Its LVTTL interface and compact 54‑TSOP II package make it suitable for designs requiring clock‑aligned memory access in a small footprint.

This device is appropriate for designers needing a documented SDRAM solution with programmable timing and integrated refresh/power modes. Technical details and timing tables are provided in the device specification to support design validation and system integration.

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