 | N/A | IS21EF04GP-JCLI-TR | Integrated Silicon Solution Inc | 4GB, 153 BALL FBGA, 3.3V, ROHS, | Flash Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 4G x 8 Technology: FLASH - NAND (pSLC) Write Cycle Time Word Page: N/A | 1,304 | |
 | N/A | IS21EF04GP-JQLI | Integrated Silicon Solution Inc | 4GB, 100 BALL FBGA, 3.3V, ROHS, | Flash Memory | 100-LFBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 4G x 8 Technology: FLASH - NAND (pSLC) Write Cycle Time Word Page: N/A | 38 | |
 | N/A | IS21EF04GP-JQLI-TR | Integrated Silicon Solution Inc | 4GB, 100 BALL FBGA, 3.3V, ROHS, | Flash Memory | 100-LFBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 4G x 8 Technology: FLASH - NAND (pSLC) Write Cycle Time Word Page: N/A | 790 | |
 | N/A | IS21EF08G-BCLI | Integrated Silicon Solution Inc | 8GB, 153 BALL FBGA, 3.3V, BOOT P | Flash Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,026 | |
 | N/A | IS21EF08G-BCLI-TR | Integrated Silicon Solution Inc | 8GB, 153 BALL FBGA, 3.3V, BOOT P | Flash Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 122 | |
 | N/A | IS21EF08G-JCLI | Integrated Silicon Solution Inc | IC FLASH 64MBIT EMMC 153FBGA | Flash Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 827 | |
 | N/A | IS21EF08G-JCLI-TR | Integrated Silicon Solution Inc | 8GB, 153 BALL FBGA, 3.3V, ROHS, | Flash Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 412 | |
 | N/A | IS21EF08G-JQLI | Integrated Silicon Solution Inc | IC FLASH 64MBIT EMMC 100FBGA | eMMC Memory | 100-LFBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 724 | |
 | N/A | IS21EF08G-JQLI-TR | Integrated Silicon Solution Inc | 8GB, 100 BALL FBGA, 3.3V, ROHS, | Flash Memory | 100-LFBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 142 | |
 | N/A | IS21EF08GP-BCLI | Integrated Silicon Solution Inc | 8GB, 153 BALL FBGA, 3.3V, BOOT P | Flash Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 619 | |
 | N/A | IS21EF08GP-BCLI-TR | Integrated Silicon Solution Inc | 8GB, 153 BALL FBGA, 3.3V, BOOT P | Flash Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,870 | |
 | N/A | IS21EF08GP-JCLI | Integrated Silicon Solution Inc | 8GB, 153 BALL FBGA, 3.3V, ROHS, | Flash Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 546 | |
 | N/A | IS21EF08GP-JCLI-TR | Integrated Silicon Solution Inc | 8GB, 153 BALL FBGA, 3.3V, ROHS, | Flash Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 411 | |
 | N/A | IS21EF08GP-JQLI | Integrated Silicon Solution Inc | 8GB, 100 BALL FBGA, 3.3V, ROHS, | Flash Memory | 100-LFBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 607 | |
 | N/A | IS21EF08GP-JQLI-TR | Integrated Silicon Solution Inc | 8GB, 100 BALL FBGA, 3.3V, ROHS, | Flash Memory | 100-LFBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,062 | |
 | | IS21ES08GA-JCLI | Integrated Silicon Solution Inc | IC FLASH 64GBIT EMMC 153VFBGA | eMMC Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 8G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,232 | |
 | | IS21ES08GA-JCLI-TR | Integrated Silicon Solution Inc | IC FLASH 64GBIT EMMC 153VFBGA | eMMC Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 8G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,417 | |
 | | IS21ES08GA-JQLI | Integrated Silicon Solution Inc | IC FLASH 64GBIT EMMC 100LFBGA | eMMC Memory | 100-LFBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 8G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,118 | |
 | | IS21ES08GA-JQLI-TR | Integrated Silicon Solution Inc | IC FLASH 64GBIT EMMC 100LFBGA | eMMC Memory | 100-LFBGA (14x18) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 8G x 8 Technology: FLASH - NAND (MLC) Write Cycle Time Word Page: N/A | 1,354 | |
 | N/A | IS21TF08G-JCLI | Integrated Silicon Solution Inc | IC FLASH 64GBIT EMMC 153VFBGA | eMMC Memory | 153-VFBGA (11.5x13) | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 8G x 8 Technology: FLASH - NAND (TLC) Write Cycle Time Word Page: N/A | 1,295 | |