 | | IH5145CPE | Analog Devices Inc. | IC SWITCH DPST-NOX2 100OHM 16DIP | Analog Switches, Multiplexers, Demultiplexers | 16-PDIP | N/A | 0°C ~ 70°C (TA) | Multiplexer/Demultiplexer Circuit: 2:1 On-State Resistance (Max): 100Ohm Channel-to-Channel Matching (ΔRon): 5Ohm Voltage – Supply, Dual (V±): ±4.5V ~ 18V Switch Time (Ton, Toff) (Max): 300ns, 150ns Current – Leakage (IS(off)) (Max): 100nA Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 16-DIP (0.300″”, 7.62mm) Supplier Device Package: 16-PDIP | 1,593 | |
 | | IH5145CPE+ | Analog Devices Inc. | IC SWITCH DUAL DPST 16DIP | Analog Switches, Multiplexers, Demultiplexers | N/A | N/A | N/A | N/A | 512 | |
 | | IH5145MJE | Analog Devices Inc. | IC SW DPST-NCX2 75OHM 16CERDIP | Analog Switches, Multiplexers, Demultiplexers | 16-CERDIP | N/A | -55°C ~ 125°C (TA) | Multiplexer/Demultiplexer Circuit: 2:1 On-State Resistance (Max): 75Ohm Channel-to-Channel Matching (ΔRon): 3Ohm Voltage – Supply, Single (V+): 4.5V ~ 18V Voltage – Supply, Dual (V±): ±4.5V ~ 18V Switch Time (Ton, Toff) (Max): 300ns, 150ns Current – Leakage (IS(off)) (Max): 100nA Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 16-CDIP (0.300″”, 7.62mm) Supplier Device Package: 16-CERDIP | 1,119 | |
 | | IM1216SDBABG-6I | Intelligent Memory Ltd. | SDRAM, 128MB, 3.3V, 8MX16, 166MH | DRAM Memory | 54-FBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 8M x 16 Write Cycle Time Word Page: 12 ns | 1,313 | |
 | | IM1216SDBATG-6I | Intelligent Memory Ltd. | SDRAM, 128MB, 3.3V, 8MX16, 166MH | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 8M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 12 ns | 1,895 | |
 | | IM1232SDBATG-6I | Intelligent Memory Ltd. | SDRAM, 128MB, 3.3V, 4MX32, 166MH | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 4M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 2 ns | 843 | |
 | | IM2508SDBBTG-6 | Intelligent Memory Ltd. | SDRAM, 256MB, 3.3V, 32MX8, 166MH | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 32M x 8 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 15 ns | 904 | |
 | | IM2516SDBATG-6I | Intelligent Memory Ltd. | SDRAM, 256MB, 3.3V, 16MX16, 166M | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 2 ns | 266 | |
 | N/A | IM2516SDBATG-6IA | Intelligent Memory Ltd. | SDRAM 256MB 16MX16 166MHZ TSOPII | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 16M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 812 | |
 | | IM2516SDBDBG-6 | Intelligent Memory Ltd. | SDRAM, 256MB, 3.3V, 16MX16, 166M | DRAM Memory | 54-FBGA (8x8) | 3V ~ 3.6V | 0°C ~ 95°C (TC) | Grade: Extended / Automotive-like Memory Organization: 16M x 16 Write Cycle Time Word Page: 12 ns | 1,776 | |
 | | IM2516SDBDBG-6I | Intelligent Memory Ltd. | SDRAM, 256MB, 3.3V, 16MX16, 166M | DRAM Memory | 54-FBGA (8x8) | 3V ~ 3.6V | -40°C ~ 95°C (TC) | Memory Organization: 16M x 16 Write Cycle Time Word Page: 12 ns | 1,929 | |
 | | IM5116D2DDBG-25 | Intelligent Memory Ltd. | DDR2 512MB, 1.8V, 32MX16, 400MHZ | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | 0°C ~ 95°C (TC) | Grade: Extended / Automotive-like Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 769 | |
 | | IM5116D2DDBG-25I | Intelligent Memory Ltd. | DDR2 512MB, 1.8V, 32MX16, 400MHZ | DRAM Memory | 84-FBGA (8x12.5) | 1.7V ~ 1.9V | -40°C ~ 95°C (TC) | Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 667 | |
 | | IM5116SDBBBG-6I | Intelligent Memory Ltd. | SDRAM, 512MB, 3.3V, 32MX16, 166M | DRAM Memory | 54-FBGA (8x8) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 32M x 16 Write Cycle Time Word Page: 15 ns | 1,281 | |
 | | IM6416SDBABG-6I | Intelligent Memory Ltd. | SDRAM, 64MB, 3.3V, 4MX16, 166MHZ | DRAM Memory | 54-FBGA (8x8) | 3V ~ 3.6V | -40°C ~ 95°C (TC) | Memory Organization: 4M x 16 Write Cycle Time Word Page: 2 ns | 1,438 | |
 | | IM6416SDBATG-6I | Intelligent Memory Ltd. | SDRAM, 64MB, 3.3V, 4MX16, 166MHZ | DRAM Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 95°C (TC) | Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 2 ns | 281 | |
 | | IM6432SDBABG-6I | Intelligent Memory Ltd. | SDRAM, 64MB, 3.3V, 2MX32, 166MHZ | DRAM Memory | 90-FBGA (11x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 2M x 32 Write Cycle Time Word Page: 2 ns | 463 | |
 | | IM6432SDBATG-6I | Intelligent Memory Ltd. | SDRAM, 64MB, 3.3V, 2MX32, 166MHZ | DRAM Memory | 86-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Organization: 2M x 32 Packaging: 86-TFSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: 2 ns | 112 | |
 | | IMC1B1A3C3A9A5E3A3A0000 | Intelligent Memory Ltd. | EMMC, 11.5X13 153 BALL, 4GB, -25 | eMMC Memory | 153-FBGA (11.5x13) | N/A | -25°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 4G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 966 | |
 | | IMC1B1A3C3A9A5I3A3A0000 | Intelligent Memory Ltd. | EMMC, 11.5X13 153 BALL, 4GB, -40 | eMMC Memory | 153-FBGA (11.5x13) | N/A | -40°C ~ 85°C (TA) | Memory Interface: eMMC_5.1 Memory Organization: 4G x 8 Technology: FLASH - NAND (SLC) Write Cycle Time Word Page: N/A | 283 | |