 | | IS42S16400D-6BLI-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 60MINIBGA | Memory | 60-MiniBGA (6.4x10.1) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Write Cycle Time Word Page: N/A | 1,004 | |
 | | IS42S16400D-6TL | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 594 | |
 | | IS42S16400D-6TL-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,198 | |
 | | IS42S16400D-6TLI | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 282 | |
 | | IS42S16400D-6TLI-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 683 | |
 | | IS42S16400D-7BL | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 60MINIBGA | Memory | 60-MiniBGA (6.4x10.1) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Write Cycle Time Word Page: N/A | 535 | |
 | | IS42S16400D-7BL-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 60MINIBGA | Memory | 60-MiniBGA (6.4x10.1) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Write Cycle Time Word Page: N/A | 1,705 | |
 | | IS42S16400D-7BLI | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 60MINIBGA | Memory | 60-MiniBGA (6.4x10.1) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Write Cycle Time Word Page: N/A | 103 | |
 | | IS42S16400D-7BLI-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 60MINIBGA | Memory | 60-MiniBGA (6.4x10.1) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Write Cycle Time Word Page: N/A | 621 | |
 | | IS42S16400D-7TL | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,040 | |
 | | IS42S16400D-7TL-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 549 | |
 | | IS42S16400D-7TLI | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 632 | |
 | | IS42S16400D-7TLI-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,888 | |
 | | IS42S16400E-7TL | Integrated Silicon Solution Inc | IC DRAM 64MBIT LVTTL 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,498 | |
 | | IS42S16400F-5BL | Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Write Cycle Time Word Page: N/A | 255 | |
 | | IS42S16400F-5BL-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Write Cycle Time Word Page: N/A | 21 | |
 | | IS42S16400F-5TL | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 741 | |
 | | IS42S16400F-5TL-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 707 | |
 | | IS42S16400F-6BL | Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Write Cycle Time Word Page: N/A | 91 | |
 | | IS42S16400F-6BL-TR | Integrated Silicon Solution Inc | IC DRAM 64MBIT PARALLEL 54TFBGA | Memory | 54-TFBGA (8x8) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 4M x 16 Write Cycle Time Word Page: N/A | 239 | |