IS42S16400F-5BL-TR

The IS42S16400F-5BL-TR is a 64‑Mbit synchronous DRAM organized as 1,048,576 × 16 × 4 banks. It implements a pipelined, fully synchronous architecture with all signals referenced to the rising edge of the clock to support high‑speed data transfers.

Designed for parallel SDRAM interfaces, the device operates from a single 3.3 V supply (3.0 V to 3.6 V), supports clock frequencies up to 200 MHz, and is offered in a compact 54‑TFBGA (8 mm × 8 mm) package for space‑constrained designs.

Key Features

• Core / Memory Organization 64‑Mbit SDRAM organized as 1,048,576 × 16 × 4 banks (4M × 16).
• Clock & Performance Fully synchronous operation with clock frequencies up to 200 MHz and access times down to 5 ns (CAS latency = 3).
• CAS Latency & Burst Control Programmable CAS latency (2 or 3 clocks) and programmable burst length (1, 2, 4, 8, full page) with selectable sequential or interleave burst sequences.
• Refresh & Self‑Maintenance Supports self‑refresh modes and auto refresh (CBR) with 4096 refresh cycles per 64 ms (commercial/A1 grades) or 16 ms (A2 grade as specified).
• Interface Parallel memory interface with LVTTL signaling for address, command and data paths.
• Power Single 3.3 V power supply operation; specified voltage range 3.0 V to 3.6 V.
• Package & Temperature 54‑TFBGA (54‑ball FBGA, 8 mm × 8 mm). Commercial operating temperature range: 0 °C to +70 °C (TA).

Typical Applications

• High‑speed data buffering Use where pipelined, synchronous transfers and programmable burst lengths optimize throughput for parallel data flows.
• Pipelined memory subsystems Suitable for designs that require predictable, clock‑referenced memory timing with selectable CAS latency.
• Parallel‑interface SDRAM designs Fits systems that integrate a parallel LVTTL SDRAM interface and need a compact 54‑TFBGA footprint.

Unique Advantages

• Flexible timing configuration: Programmable CAS latency (2 or 3 clocks) and multiple burst length/sequence options allow designers to tune latency and throughput to system needs.
• Pipelined synchronous architecture: All signals referenced to a positive clock edge enable deterministic timing and efficient high‑speed transfers.
• Integrated refresh support: Self‑refresh and auto‑refresh modes with defined refresh cycles simplify memory maintenance and reliability.
• Single‑supply operation: 3.0 V–3.6 V range (nominal 3.3 V) eases power‑rail design and integration with common system supplies.
• Compact package: 54‑TFBGA (8 mm × 8 mm) provides a small footprint option for space‑constrained boards.

Why Choose IS42S16400F-5BL-TR – IC DRAM 64MBIT PARALLEL 54TFBGA?

The IS42S16400F-5BL-TR delivers a 64‑Mbit, fully synchronous DRAM solution with pipelined operation, selectable CAS latency and programmable burst control—features that make it suitable for systems requiring predictable, high‑speed parallel memory access. Its single 3.3 V supply, integrated refresh modes and compact 54‑TFBGA package support efficient board integration in space‑constrained designs.

This device is appropriate for engineers specifying parallel SDRAM with configurable timing and burst behavior, offering a balance of performance, configurability and compact packaging for commercial‑temperature applications.

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