IS42S16400F-5TL

The IS42S16400F-5TL is a 64‑Mbit synchronous DRAM organized as 1,048,576 × 16 × 4 banks. It uses a pipelined, fully synchronous architecture to deliver high‑speed, clocked memory access for board‑level DRAM requirements.

Designed for systems that require configurable burst operation, low‑latency access and standard parallel interfaces, the device provides flexible timing and refresh options in a compact 54‑pin TSOP II package.

Key Features

• Core Architecture  Organized as 1,048,576 × 16 × 4 banks (4M × 16) with internal bank management to hide row access and precharge operations.
• Memory Capacity & Format  64 Mbit DRAM in a parallel memory format offering random column address capability every clock cycle.
• Performance & Timing  Clock frequency options up to 200 MHz with selectable CAS latency (2 or 3 clocks); access time as low as 5 ns (CAS‑3, -5 device option).
• Programmable Burst Control  Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence selection (Sequential or Interleave) for flexible data transfer patterns.
• Refresh & Low‑Power Modes  Supports self‑refresh and auto refresh (CBR); refresh rates include 4096 cycles per 64 ms (commercial/industrial/A1 options) or 16 ms (A2 option) per datasheet options.
• Interface & Signaling  LVTTL-compatible interface with a standard parallel memory command set referenced to the rising clock edge (fully synchronous operation).
• Power  Single 3.3 V power supply operation with specified operating range of 3.0 V to 3.6 V.
• Package & Temperature  54‑pin TSOP II (0.400", 10.16 mm width) package; commercial operating temperature 0°C to +70°C as specified for this device option.

Unique Advantages

• Banked memory architecture: Internal 4‑bank design reduces effective latency by enabling hidden row access and precharge.
• Flexible burst operation: Programmable burst length and sequence allow tuning data transfer patterns to match system access behavior.
• High‑speed synchronous interface: Clocked operation up to 200 MHz with selectable CAS latency supports low‑latency, pipelined transfers.
• Standard parallel LVTTL signaling: Compatible with common board‑level memory controllers that use parallel SDRAM interfaces.
• Compact board footprint: 54‑TSOP II package provides dense mounting for space‑constrained PCBs.
• Refresh and retention modes: Self‑refresh and auto refresh features provide predictable refresh behavior across device grades.

Why Choose IS42S16400F-5TL?

The IS42S16400F-5TL is a straightforward, fully synchronous 64‑Mbit DRAM option that combines a banked memory architecture, programmable burst modes and LVTTL parallel signaling to meet the timing and throughput needs of designs requiring high‑speed synchronous memory. Its selectable clock and CAS options give designers flexibility to balance frequency and latency for their system requirements.

With single‑supply 3.3 V operation and a compact 54‑TSOP II package in a commercial temperature grade, this device is suited to board‑level memory implementations where predictable timing, configurable burst behavior and a small PCB footprint are primary considerations.

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