IS42S16400F-6BLI

The IS42S16400F-6BLI is a 64‑Mbit synchronous DRAM organized as 1,048,576 × 16 × 4 banks, delivered in a 54‑ball TFBGA (8mm × 8mm) package. It implements a fully synchronous architecture with internal bank management and pipeline operation to support high‑speed parallel memory interfaces.

Designed for systems requiring compact, parallel SDRAM, this device targets applications that need a 64 Mbit memory footprint with selectable CAS latency, programmable burst lengths, and industry temperature support from -40°C to +85°C. The device operates from a 3.0 V to 3.6 V supply and, in the –6 speed grade, supports a 166 MHz clock with a typical access time of 5.4 ns.

Key Features

• Memory Architecture — 64 Mbit SDRAM arranged as 4M × 16 with 4 internal banks to improve throughput and bank‑interleaving performance.
• Speed Grade (–6) — Supports a 166 MHz clock frequency and a typical access time of 5.4 ns for the –6 device variant.
• Programmable Burst and CAS — Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence (sequential/interleave); selectable CAS latency of 2 or 3 clocks.
• Refresh and Self‑Refresh — Auto refresh (CBR) and self‑refresh support with 4096 refresh cycles per 64 ms for commercial/industrial grades (A2 grade option supports 16 ms).
• Interface and Logic — Fully synchronous operation with LVTTL interface; all signals referenced to the rising edge of the clock for timed read/write operations.
• Power — Single 3.0 V to 3.6 V power supply.
• Package and Temperature — 54‑TFBGA (8 × 8 mm) package; industrial operating temperature range of -40°C to +85°C (TA).

Typical Applications

• Embedded Systems — Provides a compact 64 Mbit parallel SDRAM option for embedded controllers and memory subsystems requiring synchronous, banked DRAM.
• Communications Equipment — Suitable for buffering and temporary storage in systems that use parallel SDRAM interfaces and require predictable CAS latency and burst control.
• Consumer and Industrial Electronics — Fits designs needing a small‑footprint, 54‑ball FBGA memory device with industrial temperature support.

Unique Advantages

• Configurable Performance: Programmable CAS latency (2 or 3 clocks) and multiple burst length/sequence options let designers tune throughput and latency to application needs.
• Compact FBGA Package: 54‑TFBGA (8×8 mm) reduces PCB area while providing the connectivity required for parallel SDRAM implementations.
• Industrial Temperature Range: Rated for -40°C to +85°C (TA), enabling deployment in a wide range of environmental conditions.
• Synchronous, Pipeline Architecture: Fully synchronous operation with internal bank management enables predictable timing and efficient pipeline data transfers.
• Standard Power Domain: Operates from a single 3.0 V to 3.6 V supply for straightforward power design integration.

Why Choose IS42S16400F-6BLI?

The IS42S16400F-6BLI balances a compact FBGA footprint with flexible synchronous DRAM features—programmable CAS latency, selectable burst modes, and multi‑bank architecture—making it appropriate for designs that require a 64 Mbit parallel SDRAM with predictable timing and configurable throughput. Its 166 MHz speed grade and 5.4 ns access time (–6) provide a clearly defined performance point for system architects and memory subsystem designers.

With industry temperature support and standard 3.0 V to 3.6 V operation, this device suits a range of embedded, communications, and industrial designs that need reliable, banked SDRAM memory in a small package while retaining programmable timing and refresh behaviors.

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