IS42S16400F-6BLI-TR

The IS42S16400F-6BLI-TR is a 64‑Mbit synchronous DRAM (SDRAM) organized as 1,048,576 × 16 × 4 banks, implemented in high‑speed CMOS. It provides a parallel LVTTL interface in a compact 54‑ball TFBGA (8 mm × 8 mm) package and is offered in a 166 MHz speed grade for low‑latency, burst‑oriented memory access.

This device is suited for designs that require a mid‑capacity, parallel SDRAM solution with programmable burst operation, selectable CAS latency, and standard 3.3 V supply operation across an extended industrial temperature range.

Key Features

• Memory Architecture – 64 Mbit organized as 1M × 16 × 4 banks, enabling internal bank operations for improved access efficiency.
• Synchronous SDRAM – Fully synchronous operation with all signals referenced to the rising clock edge and pipeline architecture for high‑speed transfers.
• Performance Options – Device speed grade (-6) targets a 166 MHz clock frequency with an access time of 5.4 ns (CAS latency = 3).
• Programmable Burst and CAS – Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence (sequential/interleave); selectable CAS latency (2 or 3 clocks).
• Refresh and Reliability – Supports self‑refresh and auto refresh (CBR); standard refresh cycles (4,096 refresh cycles per 64 ms for commercial/industrial grades).
• Interface and Voltage – LVTTL compatible parallel interface; single 3.3 V power supply with operating range 3.0 V to 3.6 V.
• Package and Temperature – 54‑TFBGA (8 mm × 8 mm) ball grid package; specified operating temperature range −40 °C to +85 °C (TA).

Typical Applications

• Embedded Memory Subsystems – For systems requiring a 64‑Mbit parallel SDRAM in a compact 54‑ball FBGA package and 3.3 V operation.
• Industrial Control – Suitable where extended operating temperature (−40 °C to +85 °C) and standard refresh operation are required.
• Consumer and Professional Electronics – Fits designs that need burst‑capable SDRAM with selectable CAS latency and LVTTL signaling.

Unique Advantages

• Flexible Performance Options – Multiple clock frequency grades (200, 166, 143, 133 MHz) and programmable CAS latency let designers balance speed and timing.
• Burst and Sequence Control – Programmable burst lengths and sequential/interleave modes simplify data throughput tuning for burst‑oriented access patterns.
• Compact Package – 54‑TFBGA (8 mm × 8 mm) minimizes PCB footprint while providing a robust ball grid mounting option.
• Standard 3.3 V Supply – Single 3.3 V operation (3.0–3.6 V range) matches common system power rails for straightforward integration.
• Built‑in Refresh Management – Self‑refresh and auto‑refresh (CBR) support reduces host refresh overhead and aids data retention during idle periods.
• Industrial Temperature Capability – Specified operation from −40 °C to +85 °C for temperature‑sensitive deployments.

Why Choose IS42S16400F-6BLI-TR?

The IS42S16400F-6BLI-TR combines a 64‑Mbit SDRAM organization with synchronous pipeline architecture, programmable burst behavior, and selectable CAS latency to provide predictable, low‑latency memory performance in systems that require a parallel LVTTL interface. Its 166 MHz speed grade and 5.4 ns access time (CL=3) support designs that need mid‑range bandwidth with burst efficiency.

Packaged in a space‑efficient 54‑TFBGA and specified for industrial temperatures, this device is appropriate for compact embedded, industrial, and consumer/professional electronics where standard 3.3 V operation, refresh management, and documented timing options are required. Documentation and full electrical/timing specifications are provided by the manufacturer to support system integration and validation.

Request a quote or submit an RFQ to receive pricing and availability for the IS42S16400F-6BLI-TR. Sales and distribution teams can provide lead‑time details and ordering information.