IS42S16400F-6TLI-TR

The IS42S16400F-6TLI-TR is a 64‑Mbit synchronous DRAM organized as 1,048,576 × 16 × 4 banks. It provides a fully synchronous parallel memory interface optimized for high‑speed, pipeline data transfer and transient storage in embedded and system applications.

This device operates from a 3.0–3.6 V supply, delivers a 166 MHz clock rate for the –6 timing grade with an access time of 5.4 ns (CAS latency = 3), and is offered in a 54‑pin TSOP II package with an industrial temperature range of −40 °C to +85 °C.

Key Features

• Memory Architecture — 64 Mbit organization: 4M × 16 with 4 internal banks (1,048,576 × 16 × 4) for improved access concurrency and row‑access hiding.
• Synchronous SDRAM — Fully synchronous operation with all signals referenced to the rising clock edge for predictable timing and pipeline transfers.
• Performance — 166 MHz clock frequency for the –6 grade with 5.4 ns access time (CAS latency = 3); programmable CAS latency selectable between 2 and 3 clocks.
• Burst and Sequencing — Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence (sequential/interleave) with burst read/write and burst read/single write capability and burst termination options.
• Refresh and Power Modes — Supports self‑refresh and auto‑refresh; 4096 refresh cycles every 64 ms for commercial/industrial/A1 grades (A2 grade option supports 16 ms refresh).
• Interface and Signaling — LVTTL compatible interface with random column address capability every clock cycle for flexible column access.
• Voltage and Package — Single 3.0–3.6 V supply; available in 54‑pin TSOP II (0.400", 10.16 mm width) surface‑mount package.
• Operating Range — Industrial operating temperature range of −40 °C to +85 °C (TA) for extended environmental tolerance.

Typical Applications

• High‑speed data buffering — Use as temporary storage and buffering where synchronous, pipeline transfers and predictable CAS timing support steady data flow.
• Embedded system memory — Provides compact parallel SDRAM capacity in space‑constrained designs using a 54‑TSOP II package.
• Frame and packet storage — Suitable for applications that require burstable parallel reads/writes and fast random column access.

Unique Advantages

• Synchronous timing predictability: All I/O referenced to the rising clock edge simplifies timing closure in high‑speed designs.
• Hidden row access via 4 banks: Multiple internal banks enable overlapping row operations to improve effective throughput.
• Flexible burst control: Programmable burst lengths and sequences let designers match transfer patterns to system requirements.
• Industry temperature support: −40 °C to +85 °C rating enables deployment in industrial environments.
• Standard supply and signaling: Single 3.3 V supply and LVTTL interface ease integration with common system logic levels.

Why Choose IC DRAM 64MBIT PAR 54TSOP II?

The IS42S16400F-6TLI-TR delivers a compact, synchronous 64‑Mbit DRAM solution that balances performance and integration for designs requiring predictable pipeline transfers, programmable burst behavior, and industrial operating range. Its 4‑bank architecture and LVTTL interface make it suitable for systems that need efficient parallel buffering and transient storage.

This device is aimed at engineers and procurement teams seeking a verified SDRAM building block with defined timing (166 MHz, 5.4 ns access for the –6 grade), controlled refresh behavior, and a 54‑TSOP II package footprint for space‑constrained boards.

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