IS42S16400F-6TLI

The IS42S16400F-6TLI is a 64‑Mbit synchronous DRAM organized as 1,048,576 × 16 × 4 banks. It implements a pipelined, fully synchronous architecture with clock‑referenced inputs and outputs to deliver high‑speed volatile memory for systems requiring predictable timing and burst access.

This device supports programmable burst lengths and CAS latency settings, making it suitable for designs that require flexible, high‑throughput parallel memory access within a 54‑pin TSOP II footprint.

Key Features

• Core Architecture  1,048,576 × 16 × 4‑bank organization with internal bank management to hide row access and precharge latency.
• Memory Capacity & Organization  64 Mbit capacity arranged as 4M × 16, providing a 16‑bit data path for parallel system interfaces.
• Performance & Timing  Supports clock frequencies of 200, 166, 143 and 133 MHz with programmable CAS latency (2 or 3 clocks). Typical access time from clock is 5.4 ns (CL = 3, -6 speed grade).
• Burst Control  Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave) for flexible block transfers and burst termination.
• Refresh & Power  Single 3.3 V power supply operation (documented operating range 3.0–3.6 V) with self‑refresh and auto‑refresh support (4,096 refresh cycles over 64 ms or 16 ms options documented).
• Interface & Commands  Fully synchronous LVTTL‑referenced interface with random column address capability every clock cycle and support for burst read/write and burst read/single write operations.
• Package & Temperature  Available in a 54‑pin TSOP II package (0.400" / 10.16 mm width) and specified operating temperature range of −40 °C to +85 °C (TA).

Unique Advantages

• Flexible timing configuration: Programmable CAS latency and burst parameters let designers match memory timing to system requirements.
• High throughput parallel interface: 16‑bit data bus and internal bank architecture enable efficient burst transfers and reduced latency for sequential accesses.
• Robust refresh management: Built‑in self‑refresh and auto‑refresh modes simplify system refresh scheduling across the documented refresh intervals.
• Standard TSOP II footprint: 54‑pin TSOP II packaging supports compact board layouts while preserving parallel memory connectivity.
• Wide operating range: 3.0–3.6 V supply range and −40 °C to +85 °C operating temperature accommodate a range of embedded system environments.

Why Choose IC DRAM 64MBIT PAR 54TSOP II?

The IS42S16400F-6TLI provides a synchronous, banked DRAM architecture with programmable burst and timing options that help balance throughput and latency in parallel memory systems. Its 64‑Mbit density, 16‑bit data path and standard TSOP II package make it suitable for space‑constrained designs requiring predictable, high‑speed volatile storage.

Engineers specifying this device benefit from configurable timing, built‑in refresh modes and a documented operating voltage and temperature range, enabling reliable integration into a variety of embedded systems where synchronous DRAM is required.

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