IS42S16400F-7BL-TR

The IS42S16400F-7BL-TR is a 64 Mbit synchronous DRAM (SDRAM) device from ISSI, organized as 1,048,576 × 16 × 4 banks to deliver pipelined, high-speed parallel memory. It implements a fully synchronous architecture with programmable burst lengths and sequences to support deterministic, clocked memory transfers.

This device is suited for designs that require a parallel SDRAM interface with a single 3.3 V supply, deterministic CAS timing, and a compact 54-ball TFBGA (8 mm × 8 mm) package for space-constrained PCBs.

Key Features

• Core / Memory Architecture  Organized as 1,048,576 × 16 × 4 banks (64 Mbit) with internal banking to hide row access/precharge and support pipelined transfers.
• SDRAM Timing and Performance  Programmable CAS latency (2 or 3 clocks); the -7 speed grade supports a 143 MHz clock frequency with an access time from clock of 5.4 ns (CAS = 3).
• Burst and Access Modes  Programmable burst lengths (1, 2, 4, 8, full page) and burst sequences (sequential/interleave); supports burst read/write and burst read/single write operations with burst termination commands.
• Refresh and Self-Refresh  Supports auto refresh (CBR) and self-refresh modes; standard refresh options include 4K refresh cycles per defined interval as noted in the device specification.
• Interface and Signaling  Fully synchronous operation with all signals referenced to the rising clock edge and LVTTL-compatible interface signaling.
• Power  Single 3.3 V power supply (3.0 V to 3.6 V specified).
• Package and Mounting  54-ball TFBGA (8 mm × 8 mm) package for compact board-level integration; mounting type: volatile memory (SMD).
• Operating Temperature  Commercial operating range: 0°C to +70°C (TA) as specified for this part number; additional operating range options are listed in the device datasheet.

Typical Applications

• Parallel SDRAM memory expansion  For systems requiring a 64 Mbit parallel SDRAM organized as 1,048,576 × 16 × 4 banks.
• Pipelined data buffering  Use where deterministic, clocked burst transfers and programmable CAS latency are needed for timed data bursts.
• Compact embedded systems  Applications that require a small-footprint 54-ball TFBGA memory device with a single 3.3 V supply.

Unique Advantages

• Deterministic synchronous operation: All inputs and outputs are referenced to the rising clock edge for predictable timing in pipelined systems.
• Flexible burst control: Programmable burst lengths and sequences enable tuning of transfer patterns to match system access behavior.
• Compact package footprint: 54-ball TFBGA (8×8 mm) reduces PCB area compared with larger memory packages while maintaining a parallel interface.
• Wide voltage tolerance: Supports a 3.0 V to 3.6 V supply range while operating nominally at 3.3 V.
• Built-in refresh management: Auto-refresh and self-refresh modes simplify system-level refresh handling for reliable data retention.

Why Choose IS42S16400F-7BL-TR?

The IS42S16400F-7BL-TR combines a compact 54-ball TFBGA package with a fully synchronous SDRAM architecture designed for deterministic, high-speed parallel memory operations. Its programmable CAS latency, burst control, and internal banking provide designers with timing flexibility and efficient pipelined transfers in systems operating at the -7 speed grade (143 MHz).

This part is suited to embedded and board-level designs that require a 64 Mbit parallel SDRAM solution with a single 3.3 V power supply and commercial temperature operation. The device’s documented timing, refresh modes, and package information support confident integration into space-constrained memory subsystems.

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