IS42S16400F-7TL-TR

The IS42S16400F-7TL-TR is a 64‑Mbit synchronous DRAM (SDRAM) organized as 1,048,576 × 16 × 4 banks. It uses a fully synchronous pipeline architecture with all signals referenced to the rising edge of the clock and supports parallel memory interfacing.

Designed for systems requiring a single‑3.3V supply parallel SDRAM, the device offers programmable burst operation, selectable CAS latency, and internal bank management to optimize row access and precharge behavior.

Key Features

• Core / Architecture  Organized as 1M × 16 × 4 banks (64 Mbit) with internal bank architecture to hide row access and precharge operations.
• Memory & Organization  SDRAM memory format, 4M × 16 organization, parallel memory interface and support for random column address every clock cycle.
• Performance  Supports clock frequencies up to 143 MHz for the -7 speed grade with access time from clock as low as 5.4 ns and programmable CAS latency (2 or 3 clocks).
• Burst & Sequencing  Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave) with burst read/write and burst read/single write capability.
• Refresh & Self‑Refresh  Auto refresh (CBR) and self‑refresh modes supported; typical refresh requirement of 4096 cycles per 64 ms for commercial/industrial/A1 grades.
• Interface & Logic Levels  LVTTL-compatible interface; all I/O referenced to the positive clock edge for fully synchronous operation.
• Power  Single supply operation with supply voltage range 3.0 V to 3.6 V (nominal 3.3 V).
• Package & Temperature  Supplied in a 54‑pin TSOP II (0.400", 10.16 mm width) package; commercial operating temperature 0 °C to 70 °C (TA).

Typical Applications

• Embedded memory subsystems  Use as parallel SDRAM storage where a 64 Mbit, 3.3 V single‑supply memory is required.
• Buffering and frame memory  Parallel SDRAM organization and programmable burst lengths support burst buffering and sequential data transfers.
• General purpose system memory  Suitable for systems that require synchronous DRAM with selectable CAS latency and self‑refresh capability.

Unique Advantages

• Flexible latency control: Programmable CAS latency (2 or 3 clocks) lets designers balance latency versus frequency requirements.
• Programmable burst operation: Multiple burst lengths and sequence modes enable optimized data transfer patterns for varied workloads.
• Single 3.3 V supply: Simplifies power rail design by operating across a 3.0 V to 3.6 V range.
• Internal bank management: Four‑bank architecture and internal bank handling reduce the effective penalty of row access/precharge.
• Standard TSOP II package: 54‑pin TSOP II (10.16 mm width) provides a common footprint for compact board-level integration.
• Commercial temperature grade: Rated for 0 °C to 70 °C (TA) to match typical commercial embedded applications.

Why Choose IS42S16400F-7TL-TR?

The IS42S16400F-7TL-TR delivers a compact, fully synchronous 64‑Mbit SDRAM option with selectable latency, programmable burst modes, and internal bank architecture to support efficient row management. Its single 3.3 V supply and LVTTL interface make it suitable for systems that require conventional parallel SDRAM memory with flexible timing control.

This device is appropriate for designers seeking a verified 64‑Mbit SDRAM footprint in a 54‑pin TSOP II package and who need features such as self‑refresh, auto refresh, and programmable burst behavior for predictable memory timing and integration. Manufacturer documentation provides full timing and operating details for system validation.

Request a quote or submit a pricing inquiry to evaluate IS42S16400F-7TL-TR for your design and obtain ordering information.