IS42S16400F-7TLI-TR

The IS42S16400F-7TLI-TR is a 64‑Mbit synchronous dynamic RAM organized as 1,048,576 bits × 16‑bit × 4‑bank. It implements a pipelined, fully synchronous architecture with all signals referenced to the rising edge of the clock for high‑speed, predictable data transfers.

Designed for parallel memory applications, this device delivers programmable burst operation, internal bank management for hidden row access/precharge, and support for self‑refresh and auto‑refresh modes to meet system memory buffering and burst access requirements.

Key Features

• Core / Architecture  Organized as 1,048,576 × 16 × 4 banks (64‑Mbit) with internal bank management to hide row access and precharge operations.
• Memory & Burst  Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave) for flexible data transfer patterns; supports burst read/write and burst read/single write operations with burst termination commands.
• Timing & Performance  Clock‑synchronous operation with available clock frequency at 143 MHz for the -7 device, and access time of 5.4 ns (CAS latency = 3) for fast, deterministic read timing. CAS latency is programmable (2 or 3 clocks).
• Refresh & Power Management  Supports self‑refresh and auto refresh modes with refresh requirements of 4,096 cycles per 64 ms (commercial/industrial/A1 grades) or per 16 ms (A2 grade), helping maintain data integrity across power states.
• Interface & Signaling  Parallel memory interface with LVTTL signaling for compatibility with common system logic levels.
• Power  Single 3.3 V supply operation; specified operating range 3.0 V to 3.6 V.
• Package & Temperature  Available in a 54‑pin TSOP II package (0.400" / 10.16 mm width) and specified operating temperature range of −40 °C to +85 °C (TA).

Typical Applications

• High‑speed system memory buffers  Used where synchronous, burstable parallel DRAM is required for temporary data storage and high throughput.
• Data buffering and frame storage  Suitable for buffering streaming or block data that benefits from programmable burst lengths and fast access times.
• Embedded memory expansion  Fits designs that need a compact 54‑pin TSOP II form factor and standard LVTTL parallel interface for system memory expansion.

Unique Advantages

• Predictable synchronous operation: All I/O referenced to the rising edge of the clock simplifies timing design and system integration.
• Flexible burst control: Programmable burst lengths and sequence selection enable optimized transfers for sequential or interleaved access patterns.
• Internal bank architecture: Four‑bank organization hides row access/precharge latency, improving effective throughput for random and sequential accesses.
• Robust refresh options: Supports self‑refresh and auto refresh modes with documented refresh cycle requirements to maintain data integrity across operating conditions.
• Compact package: 54‑pin TSOP II package (10.16 mm width) provides a space‑efficient footprint for board‑level memory placement.
• Industrial temperature range: Specified for −40 °C to +85 °C (TA) to support a wide range of environments.

Why Choose IS42S16400F-7TLI-TR?

The IS42S16400F-7TLI-TR combines a synchronous, pipelined DRAM architecture with programmable burst modes and internal four‑bank management to deliver predictable, high‑throughput parallel memory for systems requiring fast buffering and burst access. Its single 3.3 V supply, LVTTL interface, and compact 54‑TSOP II packaging make it suitable for designs that need a standardized, space‑efficient DRAM solution.

This device is appropriate for engineers and designers seeking a deterministic SDRAM option with documented timing (access times and CAS latency options), refresh behavior, and an industrial temperature rating for deployment across a range of embedded and electronic systems.

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