IS42S16400F-7BLI-TR

The IS42S16400F-7BLI-TR is a 64 Mbit synchronous DRAM organized as 1,048,576 × 16 × 4-bank. It implements a pipelined, fully synchronous architecture with all I/O referenced to the rising clock edge for predictable high-speed transfers.

Designed for systems that require parallel SDRAM memory, this device delivers programmable burst operation, internal bank management to hide row access/precharge, and a compact 54‑ball TFBGA (8 mm × 8 mm) package with industrial temperature support.

Key Features

• Core / Architecture  Fully synchronous SDRAM with internal bank architecture (4 banks) and pipeline operation; all inputs and outputs referenced to the rising clock edge.
• Memory Organization & Capacity  64 Mbit density arranged as 1,048,576 × 16 × 4 banks (4M × 16), providing parallel DRAM data access.
• Performance & Timing  Clock frequency options include 200, 166, 143 and 133 MHz; the -7 speed grade supports 143 MHz operation. CAS latency is programmable (2 or 3 clocks) with an access time of 5.4 ns at CL=3 for the -7 grade.
• Burst & Access Modes  Programmable burst lengths (1, 2, 4, 8, full page) with selectable sequential or interleaved burst sequence; supports burst read/write and burst read/single write operations and burst termination commands.
• Refresh & Self-Refresh  Auto refresh (CBR) and self-refresh modes supported; standard refresh implementation provides 4096 refresh cycles per 64 ms.
• Interface & Signaling  Parallel memory interface with LVTTL-compatible signaling.
• Power  Single 3.3 V supply with an operating voltage range of 3.0 V to 3.6 V.
• Package & Temperature  54‑ball TFBGA (8 mm × 8 mm) package (54‑TFBGA); specified operating temperature range −40 °C to +85 °C (TA).

Unique Advantages

• Predictable synchronous timing: The fully synchronous design and rising-edge clocking simplify timing analysis and system integration.
• Flexible burst operation: Programmable burst lengths and sequence modes enable tuning for throughput or latency depending on system requirements.
• Banked architecture for higher effective throughput: Four internal banks help hide row access/precharge cycles and improve sustained data transfer efficiency.
• Compact BGA package: 54‑TFBGA (8 mm × 8 mm) minimizes PCB area for space-constrained designs while providing a high-density memory option.
• Industrial temperature support: Specified operation from −40 °C to +85 °C for use in temperature‑wide operating environments.
• Low-voltage single-supply operation: Single 3.3 V supply with 3.0–3.6 V operating range simplifies power rail requirements.

Why Choose IS42S16400F-7BLI-TR?

The IS42S16400F-7BLI-TR offers a 64 Mbit, fully synchronous DRAM solution with programmable burst modes, selectable CAS latency, and an internal 4-bank architecture for improved throughput. Its -7 speed grade supports 143 MHz operation and delivers a 5.4 ns access time at CL=3, making it suitable where deterministic, high-speed parallel memory is required.

With single‑supply 3.3 V operation, LVTTL I/O, and a compact 54‑TFBGA package rated for −40 °C to +85 °C, this device is positioned for designs that need a reliable, compact SDRAM memory option backed by Integrated Silicon Solution, Inc.'s device specification and features.

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