IS42S16400F-5TL-TR

The IS42S16400F-5TL-TR from ISSI is a 64‑Mbit synchronous DRAM organized as 1,048,576 × 16 × 4 banks. It implements a pipeline, fully synchronous architecture with all signals referenced to the rising clock edge to support high‑speed data transfer in parallel memory designs.

This device targets commercial applications requiring a compact, 3.3V parallel SDRAM solution. Key value propositions include selectable CAS latency, programmable burst operation, internal bank architecture for improved throughput, and a 54‑pin TSOP II package suitable for board‑level integration in commercial temperature environments.

Key Features

• Memory Architecture — 64‑Mbit organization (1,048,576 × 16 × 4 banks) with internal bank structure to hide row access and precharge for improved access efficiency.
• Performance — Clock frequency options up to 200 MHz with access time from clock as low as 5 ns (CAS latency = 3); programmable CAS latency of 2 or 3 clocks.
• Burst and Sequencing — Programmable burst lengths (1, 2, 4, 8, full page) with selectable sequential or interleave burst sequence and burst termination support.
• Refresh and Self‑Refresh — Auto refresh (CBR) and self‑refresh modes with 4096 refresh cycles every 64 ms for commercial/A1 grades (A2 option at 16 ms available per datasheet options).
• Interface — Fully synchronous operation with LVTTL signaling and a parallel memory interface referenced to a positive clock edge.
• Power — Single 3.3 V power supply operation with specified supply range of 3.0 V to 3.6 V.
• Package and Temperature — 54‑pin TSOP II (0.400" / 10.16 mm width) package; commercial operating temperature range 0°C to +70°C. Datasheet lists additional package and grade options.

Typical Applications

• Commercial Embedded Systems — Provides compact, parallel SDRAM capacity for board‑level memory in commercial embedded designs operating within 0°C to +70°C.
• Consumer Electronics — Serves as system DRAM for consumer devices that require synchronous burst access and pipeline read/write performance.
• Board‑Level Memory Subsystems — Suited for PCB designs needing a 64‑Mbit parallel SDRAM in a 54‑pin TSOP II footprint with standard 3.3 V supply.

Unique Advantages

• Synchronous pipeline architecture — All signals referenced to the rising clock edge for predictable timing and easier system integration.
• High‑speed operation — Up to 200 MHz clock option and 5 ns access time (CL=3) to support higher throughput designs.
• Flexible burst control — Programmable burst lengths and sequence modes enable optimized transfer patterns for a variety of access scenarios.
• Standard 3.3 V supply — Operates within a 3.0 V to 3.6 V range providing compatibility with common system power rails.
• Compact TSOP II package — 54‑pin TSOP II (10.16 mm width) simplifies placement in space‑constrained board layouts.
• Configurable timing and refresh — Selectable CAS latency (2 or 3) and defined refresh regimes (4K cycles/64 ms for commercial grade) for predictable memory maintenance.

Why Choose IS42S16400F-5TL-TR?

The IS42S16400F-5TL-TR delivers a compact, commercial‑grade 64‑Mbit SDRAM solution with synchronous pipeline architecture, programmable burst modes, and selectable CAS latency to match diverse timing requirements. Its 3.3 V operation and 54‑pin TSOP II package make it straightforward to integrate into board‑level memory subsystems for commercial embedded and consumer devices.

This device is suited to designers who need a verifiable, specification‑driven SDRAM component with documented timing, refresh behavior, and package options. The combination of internal banking, burst flexibility, and standard voltage operation supports robust, repeatable memory performance in qualifying designs.

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