IS42S16400F-6BL-TR

The IS42S16400F-6BL-TR is a 64 Mbit synchronous DRAM organized as 1,048,576 × 16-bit × 4 banks, delivered in a 54-ball TFBGA (8 mm × 8 mm) package. It implements a fully synchronous pipeline architecture with LVTTL signaling and is designed for systems requiring parallel SDRAM with a single 3.3 V power supply.

This device provides programmable burst lengths and sequences, internal bank management and standard SDRAM refresh modes to support predictable, high-speed memory transactions at the -6 timing grade (166 MHz, CAS‑3 / 5.4 ns access time).

Key Features

• Core & Architecture — 1,048,576 × 16-bit × 4-bank organization (64 Mbit) with fully synchronous operation; all signals referenced to the rising edge of the clock for deterministic timing.
• Memory Performance — -6 timing grade targeted at 166 MHz clock frequency with a 5.4 ns access time (CAS‑3). Programmable CAS latency options (2 or 3 clocks) are supported.
• Burst and Sequencing — Programmable burst length (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave) for flexible data transfer patterns.
• Refresh & Power — Auto refresh and self-refresh modes; 4096 refresh cycles per 64 ms for commercial/industrial A1 grades (A2 option uses 16 ms refresh). Single 3.3 V supply (device specified 3.0 V – 3.6 V).
• Interface — Parallel SDRAM interface with LVTTL signaling and random column addressing every clock cycle.
• Package & Temperature — 54-ball FBGA (TFBGA) 8 mm × 8 mm package; commercial operating temperature 0 °C to +70 °C.

Typical Applications

• Embedded systems requiring parallel SDRAM — Provides 64 Mbit of synchronous volatile memory with LVTTL signaling for designs that integrate parallel SDRAM devices.
• Board-level memory expansion — 54-TFBGA (8×8 mm) footprint suited to PCBs that accept a 54-ball FBGA package for compact memory placement.
• High-frequency synchronous memory tasks — Suited to designs that need programmable burst transfers and deterministic timing at the -6 grade (166 MHz).

Unique Advantages

• Predictable synchronous timing: Fully synchronous, clock-referenced I/O and documented CAS latency options support deterministic memory timing and system-level timing analysis.
• Flexible burst control: Programmable burst lengths and sequences enable optimization of sequential and random access patterns for varying workloads.
• Integrated bank architecture: Four internal banks help hide row access/precharge latency, improving effective throughput for interleaved access patterns.
• Standard 3.3 V power domain: Single 3.3 V supply (3.0–3.6 V range) simplifies power rail design for systems that already use 3.3 V logic.
• Compact BGA footprint: 54-ball TFBGA (8 mm × 8 mm) reduces PCB area compared with larger memory packages while maintaining parallel SDRAM connectivity.

Why Choose IS42S16400F-6BL-TR?

The IS42S16400F-6BL-TR delivers a compact, standards-based 64 Mbit synchronous DRAM solution with documented timing parameters (166 MHz / CAS‑3 variant) and flexible burst controls. Its 4-bank organization, LVTTL interface and single 3.3 V supply make it appropriate for designs that need predictable synchronous memory behavior in a small FBGA package.

This device suits engineers who require clear timing data, selectable burst operation and standard SDRAM refresh modes for reliable system integration within the commercial temperature range.

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