IS42S16400F-5BL

The IS42S16400F-5BL is a 64‑Mbit synchronous dynamic RAM organized as 1,048,576 × 16 × 4 banks. It implements a fully synchronous, pipelined SDRAM architecture with a parallel LVTTL interface and programmable burst and latency options.

Designed for systems requiring compact, high‑speed parallel DRAM, the device operates from a single 3.3 V supply (3.0 V–3.6 V range) and is available in a 54‑ball TFBGA (8 mm × 8 mm) package with a commercial operating temperature of 0 °C to 70 °C.

Key Features

• Memory Organization: 64 Mbit configured as 4M × 16 with 4 internal banks for improved access concurrency and throughput.
• High‑speed SDRAM Core: Fully synchronous operation with clocked inputs; supported clock frequencies include 200, 166, 143 and 133 MHz.
• Low Latency & Fast Access: Programmable CAS latency (2 or 3 clocks) with access times down to 5 ns (CL = 3) from the clock edge.
• Programmable Burst Modes: Burst length selectable (1, 2, 4, 8, full page) and burst sequence selectable (sequential or interleave) for flexible data transfer patterns.
• Refresh & Power Management: Supports self‑refresh and auto refresh (CBR); 4096 refresh cycles every 64 ms for standard grades (A2 option provides 16 ms).
• Interface & Voltage: Parallel LVTTL interface with single 3.3 V supply (operating range 3.0 V–3.6 V).
• Package & Temperature: 54‑TFBGA (8 mm × 8 mm) ball grid package; commercial operating temperature 0 °C to 70 °C (TA).

Unique Advantages

• Flexible Performance Scaling: Multiple supported clock speeds (up to 200 MHz) and selectable CAS latency let designers balance throughput and timing requirements.
• Burst and Sequence Flexibility: Programmable burst lengths and sequential/interleave modes simplify block transfers and optimize access patterns for varied workloads.
• Compact Footprint: 54‑ball TFBGA (8×8 mm) package reduces PCB area for space‑constrained designs while providing ball‑grid reliability.
• Standard Voltage Integration: Single 3.3 V operation (3.0 V–3.6 V) and LVTTL signaling enable straightforward integration into common legacy and contemporary system power rails.
• Robust Refresh Options: Self‑refresh and auto refresh support with defined refresh cycle requirements provide predictable data retention behavior under varying operating conditions.

Why Choose IC DRAM 64MBIT PARALLEL 54TFBGA?

The IS42S16400F-5BL offers a compact, synchronous DRAM solution with programmable latency and burst control for designs that require deterministic, high‑speed parallel memory. Its 4‑bank organization, selectable burst modes and supported clock rates provide designers with timing flexibility and throughput options tailored to application needs.

With single‑supply 3.3 V operation, LVTTL interface, and a 54‑TFBGA package, this device suits systems prioritizing board space and straightforward memory integration while maintaining defined refresh and timing behaviors backed by documented electrical and timing parameters.

Request a quote or contact sales to discuss availability, lead times, and how the IS42S16400F-5BL fits your memory subsystem requirements.