IS42S16400D-7BL

The IS42S16400D-7BL is a 64‑Mbit synchronous DRAM device organized as 1,048,576 × 16 × 4 banks. It implements a fully synchronous, pipeline architecture with all signals referenced to the rising edge of the system clock for deterministic, high‑speed burst transfers.

Designed for 3.3 V memory systems, this parallel‑interface SDRAM targets applications that require burst‑oriented data access, internal bank interleaving for hidden precharge, and flexible timing control via programmable burst length and CAS latency.

Key Features

• Core & Architecture  Quad‑bank SDRAM with internal bank architecture to hide row access/precharge and support seamless burst operations.
• Memory Organization  64 Mbit total capacity arranged as 1,048,576 × 16 × 4 banks (4M × 16) to support wide data paths and efficient block transfers.
• Performance  Supported clock frequencies include 166 MHz and 143 MHz with an access time of 5.4 ns and programmable CAS latency (2 or 3 clocks) for timing flexibility.
• Burst & Addressing  Programmable burst lengths (1, 2, 4, 8, full page) and burst sequence (Sequential/Interleave), with random column address capability every clock cycle.
• Refresh & Power Modes  AUTO REFRESH and self‑refresh modes with 4096 refresh cycles every 64 ms; includes power‑down options to reduce standby power.
• Interface & Signalling  LVTTL compatible I/O with parallel memory interface and byte control via LDQM and UDQM; separate VDDQ/GNDQ pin domains supported in the device pinout.
• Power & Supply  Single supply operation specified at 3.0 V to 3.6 V (nominal 3.3 V) for common 3.3 V memory systems.
• Package & Temperature  60‑ball fBGA (6.4 × 10.1 mm) miniBGA package; operating ambient temperature range 0 °C to 70 °C (TA). Lead‑free package options are available.

Typical Applications

• Embedded Systems  Provides parallel high‑speed burst memory for buffering and working memory in embedded controllers and processors operating at 3.3 V.
• Consumer Electronics  Suitable for devices needing compact BGA memory with burst read/write capability and programmable timing for display/frame buffering or data staging.
• Networking & Communications  Useful for line‑rate buffering and packet staging where synchronous burst access and internal bank interleaving improve throughput.

Unique Advantages

• Quad‑bank design for hidden precharge: Enables overlapping of precharge and access cycles to improve effective throughput without additional external logic.
• Flexible burst control: Programmable burst length and sequence let system designers tailor transfers for sequential or interleaved access patterns.
• Synchronous, LVTTL‑compatible I/O: All signals referenced to the clock edge for predictable timing and simplified interface design with common logic levels.
• Compact BGA package: 60‑ball miniBGA (6.4 × 10.1 mm) provides a small footprint for space‑constrained board layouts.
• Standard 3.3 V supply range: Operates within 3.0 V–3.6 V systems, matching common memory voltage rails for straightforward integration.

Why Choose IS42S16400D-7BL?

The IS42S16400D-7BL delivers a practical combination of synchronous, quad‑bank architecture and programmable burst/timing features for designs that require predictable, high‑speed parallel memory. Its 64‑Mbit capacity in a compact 60‑ball miniBGA and support for common 3.3 V systems make it well suited to embedded and consumer applications where board space and deterministic burst performance matter.

Engineers specifying this device benefit from programmable latency and burst options, self‑refresh and auto‑precharge capabilities, and a device footprint that supports dense PCB layouts—providing a reliable, design‑friendly memory option backed by documented device specifications.

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