IS42S16400D-7BLI-TR
| Part Description |
IC DRAM 64MBIT PAR 60MINIBGA |
|---|---|
| Quantity | 465 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 60-MiniBGA (6.4x10.1) | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 143 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 60-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 4M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0002 |
Overview of IS42S16400D-7BLI-TR – 64Mbit SDRAM, 60-MiniBGA
The IS42S16400D-7BLI-TR is a 64‑Mbit synchronous DRAM (SDRAM) device from Integrated Silicon Solution Inc. It is organized as 1,048,576 × 16 × 4 banks and implements a fully synchronous, pipelined architecture to support high-speed burst transfers and bank interleaving.
Designed for systems requiring parallel SDRAM storage in a compact 60‑ball MiniBGA (6.4 × 10.1 mm) package, the device targets applications that need controlled LVTTL signaling, programmable burst and latency options, and wide operating temperature range.
Key Features
- Memory Core & Organization — 64 Mbit total capacity organized as 4M × 16 with four internal banks to enable bank interleaving and improved random-access performance.
- Synchronous Operation & Clocking — Fully synchronous operation with clock frequency options listed in device documentation (166 MHz and 143 MHz) and all signals registered on the rising clock edge for deterministic timing.
- Burst and Addressing Flexibility — Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequences (sequential/interleave) for adaptable data-transfer patterns; random column address changes supported every clock cycle during burst access.
- Latency & Timing — Programmable CAS latency of 2 or 3 clocks; documented access time of 5.4 ns for timing-sensitive designs.
- Refresh and Power Management — AUTO REFRESH and self‑refresh modes with 4,096 refresh cycles every 64 ms; includes power-down capabilities to reduce standby power.
- Interface and Byte Control — LVTTL I/O signaling with byte-lane control via LDQM and UDQM; supports burst read/write and burst read/single write operations with burst termination commands.
- Supply Voltage — Single 3.3 V supply noted in device documentation; voltage supply range specified at 3.0 V to 3.6 V in product specifications.
- Package & Temperature Range — 60‑ball fBGA / 60‑MiniBGA (6.4 × 10.1 mm) package; industrial temperature availability with operating range −40 °C to 85 °C (TA).
Typical Applications
- Industrial Systems — Compact SDRAM memory for industrial controllers and embedded equipment requiring −40 °C to 85 °C operation.
- Communications Equipment — High-speed burst transfers and bank interleaving suitable for buffering and packet handling in networking hardware.
- Consumer and Embedded Electronics — Parallel SDRAM storage for systems needing low-latency burst reads/writes and flexible burst sequencing.
Unique Advantages
- Quad‑bank architecture: Four internal banks allow precharging one bank while accessing another to hide precharge time and maintain seamless burst performance.
- Programmable burst and latency options: Configure burst length and CAS latency to match system timing and throughput requirements, improving flexibility for diverse data patterns.
- Compact MiniBGA footprint: 60‑ball fBGA (6.4 × 10.1 mm) reduces PCB area while delivering a full SDRAM feature set for space-constrained designs.
- Industrial temperature support: Operation from −40 °C to 85 °C enables use in temperature-challenging environments without additional thermal qualification claims.
- Byte-lane control and LVTTL I/O: LDQM/UDQM byte masking and LVTTL signaling simplify interfacing with standard logic levels and support partial-word operations.
Why Choose IS42S16400D-7BLI-TR?
The IS42S16400D-7BLI-TR is positioned as a compact, flexible SDRAM solution that combines a 64‑Mbit density with programmable burst behavior, selectable CAS latency, and bank‑interleaving capabilities. Its LVTTL interface and byte-lane controls make it suitable for parallel-memory architectures where deterministic, synchronous transfers are required.
This device is appropriate for designers who need a space-efficient SDRAM in an industrial temperature profile with documented timing (including a 5.4 ns access time) and support for self‑refresh and auto‑precharge modes. The combination of programmable transfer options and a small MiniBGA package delivers scalable performance and integration for mid-density memory applications.
If you would like pricing, availability, or a formal quote for IS42S16400D-7BLI-TR, submit a quote request or contact our sales team with your part number and project requirements.