IS42S16400D-7BLI-TR

IC DRAM 64MBIT PAR 60MINIBGA
Part Description

IC DRAM 64MBIT PAR 60MINIBGA

Quantity 465 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package60-MiniBGA (6.4x10.1)Memory FormatDRAMTechnologySDRAM
Memory Size64 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging60-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization4M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0002

Overview of IS42S16400D-7BLI-TR – 64Mbit SDRAM, 60-MiniBGA

The IS42S16400D-7BLI-TR is a 64‑Mbit synchronous DRAM (SDRAM) device from Integrated Silicon Solution Inc. It is organized as 1,048,576 × 16 × 4 banks and implements a fully synchronous, pipelined architecture to support high-speed burst transfers and bank interleaving.

Designed for systems requiring parallel SDRAM storage in a compact 60‑ball MiniBGA (6.4 × 10.1 mm) package, the device targets applications that need controlled LVTTL signaling, programmable burst and latency options, and wide operating temperature range.

Key Features

  • Memory Core & Organization — 64 Mbit total capacity organized as 4M × 16 with four internal banks to enable bank interleaving and improved random-access performance.
  • Synchronous Operation & Clocking — Fully synchronous operation with clock frequency options listed in device documentation (166 MHz and 143 MHz) and all signals registered on the rising clock edge for deterministic timing.
  • Burst and Addressing Flexibility — Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequences (sequential/interleave) for adaptable data-transfer patterns; random column address changes supported every clock cycle during burst access.
  • Latency & Timing — Programmable CAS latency of 2 or 3 clocks; documented access time of 5.4 ns for timing-sensitive designs.
  • Refresh and Power Management — AUTO REFRESH and self‑refresh modes with 4,096 refresh cycles every 64 ms; includes power-down capabilities to reduce standby power.
  • Interface and Byte Control — LVTTL I/O signaling with byte-lane control via LDQM and UDQM; supports burst read/write and burst read/single write operations with burst termination commands.
  • Supply Voltage — Single 3.3 V supply noted in device documentation; voltage supply range specified at 3.0 V to 3.6 V in product specifications.
  • Package & Temperature Range — 60‑ball fBGA / 60‑MiniBGA (6.4 × 10.1 mm) package; industrial temperature availability with operating range −40 °C to 85 °C (TA).

Typical Applications

  • Industrial Systems — Compact SDRAM memory for industrial controllers and embedded equipment requiring −40 °C to 85 °C operation.
  • Communications Equipment — High-speed burst transfers and bank interleaving suitable for buffering and packet handling in networking hardware.
  • Consumer and Embedded Electronics — Parallel SDRAM storage for systems needing low-latency burst reads/writes and flexible burst sequencing.

Unique Advantages

  • Quad‑bank architecture: Four internal banks allow precharging one bank while accessing another to hide precharge time and maintain seamless burst performance.
  • Programmable burst and latency options: Configure burst length and CAS latency to match system timing and throughput requirements, improving flexibility for diverse data patterns.
  • Compact MiniBGA footprint: 60‑ball fBGA (6.4 × 10.1 mm) reduces PCB area while delivering a full SDRAM feature set for space-constrained designs.
  • Industrial temperature support: Operation from −40 °C to 85 °C enables use in temperature-challenging environments without additional thermal qualification claims.
  • Byte-lane control and LVTTL I/O: LDQM/UDQM byte masking and LVTTL signaling simplify interfacing with standard logic levels and support partial-word operations.

Why Choose IS42S16400D-7BLI-TR?

The IS42S16400D-7BLI-TR is positioned as a compact, flexible SDRAM solution that combines a 64‑Mbit density with programmable burst behavior, selectable CAS latency, and bank‑interleaving capabilities. Its LVTTL interface and byte-lane controls make it suitable for parallel-memory architectures where deterministic, synchronous transfers are required.

This device is appropriate for designers who need a space-efficient SDRAM in an industrial temperature profile with documented timing (including a 5.4 ns access time) and support for self‑refresh and auto‑precharge modes. The combination of programmable transfer options and a small MiniBGA package delivers scalable performance and integration for mid-density memory applications.

If you would like pricing, availability, or a formal quote for IS42S16400D-7BLI-TR, submit a quote request or contact our sales team with your part number and project requirements.

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