IS42S16400D-6TLI

The IS42S16400D-6TLI from Integrated Silicon Solution, Inc. (ISSI) is a 64‑Mbit synchronous DRAM organized as 1,048,576 × 16 × 4 banks (4M × 16). It implements a pipelined, fully synchronous architecture with internal bank interleaving to support high‑speed burst transfers and efficient random access.

Designed for systems that use a parallel SDRAM interface, the device delivers programmable burst lengths and CAS latencies, LVTTL I/O compatibility, and industrial temperature availability, making it suitable for embedded and industrial memory buffering and expansion applications.

Key Features

• Core Architecture Quad‑bank SDRAM configured as 1,048,576 × 16 × 4 banks to enable interleaved bank operation and improved access concurrency.
• Memory Organization & Capacity 64‑Mbit total capacity organized as 4M × 16, providing a parallel 16‑bit data path (DQ0–DQ15).
• Performance Supports clock frequencies up to 166 MHz with an access time of 5 ns and programmable CAS latency (2 or 3 clocks) for tuned timing performance.
• Burst & Addressing Programmable burst lengths (1, 2, 4, 8, full page) and burst sequences (sequential/interleave); random column address capable every clock cycle and burst termination via stop/precharge commands.
• Interface & Control LVTTL compatible inputs/outputs with standard SDRAM control signals (CLK, CKE, CS, RAS, CAS, WE) and byte masking via LDQM and UDQM.
• Power & Refresh Single 3.3 V power architecture (device specified supply range 3.0–3.6 V) with AUTO REFRESH and self‑refresh modes; 4096 refresh cycles every 64 ms.
• System Reliability Internal bank precharge and AUTO PRECHARGE support hide row access/precharge timing to maintain high throughput.
• Package & Temperature Available in 54‑pin TSOP II (0.400", 10.16 mm width) package and rated for industrial operating temperature (‑40 °C to 85 °C).

Typical Applications

• Industrial Control Systems Use as synchronous working memory in industrial equipment where the ‑40 °C to 85 °C temperature range and parallel SDRAM interface are required.
• Embedded Systems Local buffer and frame memory for embedded platforms that require a 16‑bit parallel SDRAM with selectable burst modes and CAS latency.
• Legacy Parallel Memory Designs Drop‑in memory expansion for systems using parallel SDRAM interfaces and TSOP II footprint constraints.

Unique Advantages

• Programmable Burst Flexibility: Multiple burst lengths and sequences allow tailoring transfer patterns to application access characteristics.
• Bank Interleaving for Throughput: Four internal banks and hidden precharge enable overlapping operations to improve sustained data transfer rates.
• Industrial Temperature Range: Specified operation from ‑40 °C to 85 °C supports deployment in temperature‑sensitive and industrial environments.
• Standard Parallel Interface: LVTTL‑compatible signals and 16‑bit DQ bus simplify integration into parallel SDRAM systems and legacy designs.
• Compact TSOP II Package: 54‑pin TSOP II (0.400" / 10.16 mm width) option for space‑constrained PCB layouts requiring through‑board or surface mounting.

Why Choose IS42S16400D-6TLI?

The IS42S16400D-6TLI positions itself as a practical 64‑Mbit synchronous DRAM option for designs that need a parallel 16‑bit SDRAM with programmable burst behavior, bank interleaving, and industrial temperature support. Its combination of selectable timing (CAS latency), burst configurations, and refresh modes provides designers with the timing flexibility required for embedded buffering and system memory tasks.

This device is well suited to engineers and procurement teams targeting reliable SDRAM capacity in a compact 54‑pin TSOP II package, with clear electrical and timing characteristics (3.0–3.6 V supply range and LVTTL I/O) that facilitate predictable integration and long‑term deployment in industrial and embedded applications.

For pricing, lead time, or to request a quote for IS42S16400D-6TLI, submit an inquiry referencing the part number and required quantity.