IS42S16400D-6BLI

The IS42S16400D-6BLI is a 64‑Mbit synchronous DRAM organized as 1,048,576 × 16 × 4 banks, manufactured by Integrated Silicon Solution Inc (ISSI). It implements a fully synchronous pipeline architecture with internal bank interleaving and is designed to operate in 3.3V memory systems.

This device targets board‑level memory applications that require programmable burst control, selectable CAS latency, and industrial temperature operation (‑40°C to 85°C), delivered in a compact 60‑ball miniBGA package.

Key Features

• Synchronous SDRAM Architecture Fully synchronous design with all signals referenced to the positive clock edge and a pipeline architecture for high data throughput.
• Memory Organization & Capacity 64 Mbit total capacity, internally organized as 1,048,576 bits × 16 × 4 banks (4M × 16).
• Clock and Timing Supports clock frequencies up to 166 MHz (also available at 143 MHz) with an access time of 5 ns and programmable CAS latency (2 or 3 clocks).
• Burst Control & Addressing Programmable burst lengths (1, 2, 4, 8, full page) and burst sequences (sequential/interleave) with random column address capability every clock cycle.
• Bank Interleaving & Auto Precharge Internal bank structure and auto precharge/self‑timed precharge enable hiding of row access/precharge cycles to improve sustained access.
• Refresh & Power Modes Supports AUTO REFRESH and self‑refresh modes with 4,096 refresh cycles every 64 ms; single 3.3V power supply operation (specified 3.0V–3.6V).
• Interface & I/O LVTTL‑compatible inputs/outputs, parallel memory interface, and byte masking via LDQM and UDQM for upper/lower byte control.
• Package & Temperature Available in a compact 60‑ball fBGA (60‑MiniBGA, 6.4 × 10.1 mm) and rated for industrial temperature operation (‑40°C to 85°C TA).

Typical Applications

• 3.3V Memory Subsystems Drop‑in SDRAM for board‑level memory systems designed around a single 3.3V supply and LVTTL signaling.
• Industrial Electronics Suited for industrial equipment requiring DRAM operation across an extended temperature range (‑40°C to 85°C).
• Systems Requiring Burst/Random Access Applications that benefit from programmable burst lengths, interleaved bank access, and random column addressing for streamed or bursty data patterns.

Unique Advantages

• Synchronous, pipelined operation: Enables high‑speed, clocked data transfers referenced to the positive clock edge for predictable timing.
• Flexible burst control: Programmable burst lengths and sequences (sequential/interleave) plus random column addressing every clock cycle for versatile access patterns.
• Bank interleaving and auto precharge: Internal 4‑bank architecture and auto precharge help hide row access/precharge latency for improved sustained throughput.
• Industrial temperature range: Rated for operation from ‑40°C to 85°C TA for use in temperature‑sensitive environments.
• Compact BGA package: 60‑ball miniBGA (6.4 × 10.1 mm) provides a small board footprint for space‑constrained designs.
• Single 3.3V supply: Simplifies power design with specified operation at 3.0–3.6V.

Why Choose IS42S16400D-6BLI?

The IS42S16400D-6BLI from ISSI offers a focused feature set for designers needing a 64‑Mbit synchronous DRAM with programmable burst behavior, bank interleaving, and LVTTL interface. Its pipeline architecture, selectable CAS latency, and support for self‑refresh and auto refresh make it suitable for systems that require predictable, clock‑synchronous memory access.

With single‑supply 3.3V operation, industrial temperature capability, and a compact 60‑ball miniBGA footprint, this device is appropriate for board‑level memory implementations where compact packaging and extended temperature range are important considerations.

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