IS42S16400D-6BL

The IS42S16400D-6BL is a 64‑Mbit synchronous DRAM organized as 1,048,576 × 16 bits × 4 banks, designed for 3.3 V memory systems. It implements a fully synchronous, pipelined architecture with internal bank interleaving to support high‑speed burst access and efficient row precharge hiding.

This SDRAM is intended for systems requiring compact, parallel DRAM memory at up to 166 MHz clock operation, delivered in a 60‑ball miniBGA package suitable for board‑level integration where a compact footprint and standard synchronous DRAM features are needed.

Key Features

• Core Architecture  Quad‑bank SDRAM organized as 1,048,576 bits × 16 × 4 banks for concurrent bank operation and improved access efficiency.
• Memory & Performance  64 Mbit capacity with 4M × 16 organization, programmable CAS latency (2 or 3 clocks), and clock frequency support up to 166 MHz (also available at 143 MHz). Access time specified at 5 ns.
• Burst and Addressing  Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave) with random column-address capability every clock cycle.
• Refresh & Power Modes  Self‑refresh and AUTO REFRESH modes with 4,096 refresh cycles every 64 ms, plus power‑down mode to support power management.
• Interface & Signaling  LVTTL‑compatible inputs/outputs and parallel memory interface; byte control via LDQM and UDQM; all signals referenced to the rising edge of CLK.
• Voltage  Single supply operation specified across 3.0 V to 3.6 V (standard 3.3 V operation).
• Package & Mounting  60‑ball fBGA miniBGA package (6.4 × 10.1 mm) for compact board mounting; also available in 54‑pin TSOP II per datasheet.
• Operating Range  Commercial operating temperature: 0 °C to 70 °C (TA).

Typical Applications

• 3.3 V Memory Systems  Acts as system memory for platforms and modules designed around 3.3 V synchronous DRAM architectures.
• Embedded Systems  Provides compact, burst‑capable DRAM for embedded boards requiring synchronous parallel memory in a miniBGA footprint.
• Board‑Level DRAM Expansion  Used where a 64 Mbit parallel SDRAM is needed for buffering, temporary storage, or memory expansion on custom PCBs.

Unique Advantages

• Quad‑Bank Architecture:  Four internal banks enable precharge hiding and interleaved access to improve effective throughput during burst operations.
• Flexible Burst Control:  Programmable burst lengths and sequences plus random column addressing every clock allow tailored access patterns for varied workloads.
• High‑Speed Synchronous Operation:  Fully synchronous, LVTTL‑referenced signals and clock support up to 166 MHz for high‑rate burst transfers.
• Standard 3.3 V Single Supply:  Operates across a 3.0–3.6 V range with standard 3.3 V systems compatibility, simplifying power design.
• Compact MiniBGA Package:  60‑ball fBGA (6.4 × 10.1 mm) minimizes PCB area while providing a standard BGA mounting option.
• Built‑in Refresh and Low‑Power Modes:  Self‑refresh, AUTO REFRESH, and power‑down features support data retention and reduced power draw when idle.

Why Choose IS42S16400D-6BL?

The IS42S16400D-6BL delivers a focused combination of synchronous DRAM features—quad‑bank architecture, programmable burst and CAS settings, and up to 166 MHz clock operation—packaged in a compact 60‑ball miniBGA. It is suitable for designs that require a standardized 64‑Mbit parallel SDRAM solution operating from a 3.3 V supply and targeting commercial temperature ranges.

Its standard interface, refresh capabilities, and power modes make it a practical choice for engineers integrating board‑level memory where predictable synchronous behavior, compact packaging, and straightforward voltage requirements are priorities.

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