IS42S16400D-6BL-TR

The IS42S16400D-6BL-TR is a 64‑Mbit synchronous DRAM organized as 1,048,576 × 16 × 4 banks. It implements a fully synchronous, pipeline architecture with all signals referenced to the rising edge of the clock and is designed for 3.3 V memory systems with a parallel LVTTL interface.

This device targets high‑speed, burst‑oriented memory operations with programmable burst length and CAS latency, bank interleaving for hidden precharge, and support for self‑refresh and power‑down modes to address system-level memory needs.

Key Features

• Core Architecture  Quad‑bank organization (1,048,576 bits ×16 ×4 banks) with fully synchronous, pipeline operation to support high‑speed data transfers.
• Memory Performance  Clock frequency up to 166 MHz (also specified at 143 MHz) and access time down to 5 ns; supports programmable CAS latency of 2 or 3 clocks.
• Burst and Access Control  Programmable burst length (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave); supports burst read/write and burst read/single write with burst termination options.
• Refresh and Power Modes  Self‑refresh and power‑down modes are supported; device requires 4096 refresh cycles every 64 ms.
• Interface and Byte Control  LVTTL compatible interface with parallel memory I/O; byte masking provided via LDQM and UDQM; dedicated VDDQ/GNDQ pins for DQ power and ground.
• Supply and Voltage  Single 3.3 V power supply (product data lists 3.0 V to 3.6 V operating range) for standard 3.3 V memory systems.
• Package Options  Available in a 60‑ball fBGA / 60‑MiniBGA (6.4 × 10.1 mm) package; also available in 54‑pin TSOP II per datasheet notes.
• Operating Temperature  Specified operating temperature: 0 °C to 70 °C (TA); datasheet notes industrial temperature availability for applicable variants.

Typical Applications

• Embedded memory subsystems  As a 64‑Mbit synchronous DRAM for 3.3 V memory systems requiring programmable burst access and LVTTL signaling.
• High‑speed buffer memory  Used where burst read/write and random column access every clock cycle improve throughput in burst‑oriented data paths.
• Compact module designs  Suitable for space‑constrained PCBs due to the 60‑ball MiniBGA package (6.4 × 10.1 mm) and alternative TSOP II footprint options.

Unique Advantages

• Quad‑bank interleaving  Internal banks allow precharge hiding and interleaving between banks to maintain seamless, high‑speed random access.
• Flexible burst control  Programmable burst lengths and sequence modes enable tuning of transfer patterns to match system access patterns.
• Standard 3.3 V operation  Single 3.3 V supply simplifies integration into existing 3.3 V memory subsystems (product data lists 3.0–3.6 V range).
• Byte‑level masking  LDQM and UDQM provide lower/upper byte masking for fine‑grained write control on the 16‑bit data bus.
• Compact package availability  60‑ball MiniBGA option delivers a small footprint (6.4 × 10.1 mm) while TSOP II is available for alternate board layouts.

Why Choose IS42S16400D-6BL-TR?

The IS42S16400D-6BL-TR combines a synchronous pipeline architecture with quad‑bank organization and programmable burst/CAS controls to deliver a flexible 64‑Mbit parallel SDRAM option for 3.3 V systems. Its LVTTL interface, byte masking, and support for self‑refresh and power‑down modes make it suitable for designs that require predictable burst performance and standard SDRAM features.

This device is offered in compact packaging options and is documented with detailed timing and functional descriptions, making it appropriate for engineers integrating a 64‑Mbit SDRAM into constrained board layouts or existing 3.3 V memory subsystems.

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