IS42S16400D-6TL

The IS42S16400D-6TL is a 64 Mbit synchronous DRAM organized as 4M × 16 with four internal banks and a fully synchronous interface. It operates from a single 3.3 V supply and uses a pipeline architecture with all signals referenced to the positive clock edge.

This device targets designs that require parallel SDRAM memory with programmable burst operation, selectable CAS latency, and support for self-refresh and power-down modes. It is supplied in a 54‑pin TSOP II (0.400", 10.16 mm width) package with an operating temperature range of 0 °C to 70 °C.

Key Features

• Core / Memory Architecture — 64 Mbit capacity organized as 1,048,576 × 16 × 4 banks (4M × 16) to support bank interleaving and high-speed burst access.
• Synchronous Operation — Fully synchronous SDRAM with all inputs and outputs registered on the rising edge of the clock; LVTTL compatible I/O.
• Performance — Clock frequency up to 166 MHz and a specified access time of 5 ns; programmable CAS latency of 2 or 3 clocks.
• Burst and Sequencing — Programmable burst lengths (1, 2, 4, 8, full page) and selectable burst sequence (sequential or interleave) for flexible data transfer patterns.
• Refresh and Power Management — Supports AUTO REFRESH mode, self-refresh, and power-down modes with 4096 refresh cycles every 64 ms.
• Voltage and I/O Power — Single 3.3 V supply with VDDQ/VDD and separate ground pins for DQ; operating voltage range 3.0 V to 3.6 V.
• Package and Temperature — 54‑pin TSOP II (0.400", 10.16 mm width) package; specified operating ambient temperature 0 °C to 70 °C.

Typical Applications

• System Memory Expansion — Parallel SDRAM memory for systems that require 64 Mbit density with 4‑bank organization and burst access.
• Embedded Platforms — Memory for embedded designs requiring a 3.3 V synchronous DRAM interface with programmable burst and CAS options.
• High‑Throughput Data Buffers — Suitable where pipeline architecture and bank interleaving are used to sustain burst read/write transfers.

Unique Advantages

• Quad‑bank Organization: Internal 4‑bank architecture enables bank interleaving to hide precharge time and improve effective throughput.
• Flexible Burst Control: Programmable burst lengths and selectable burst sequence allow matching memory transfers to system data patterns.
• Synchronous, LVTTL I/O: Fully synchronous operation with LVTTL-compatible signals simplifies timing design tied to a single clock edge.
• Power Management Modes: Auto refresh, self-refresh, and power-down modes provide on‑device mechanisms to manage refresh and reduce power when idle.
• Package Density: 54‑pin TSOP II (0.400") package offers a compact footprint for board-level integration while exposing separate VDD/VDDQ and GND/GNDQ pins for power routing.

Why Choose IS42S16400D-6TL?

The IS42S16400D-6TL combines a 64 Mbit SDRAM organization with fully synchronous operation, programmable burst behavior, and selectable CAS latency to meet designs that need predictable, clocked memory performance. Its 3.3 V single-supply operation, self-refresh and power-down features, and banked architecture make it suitable for systems that require controlled refresh behavior and flexible transfer modes.

This device is appropriate for engineers specifying parallel SDRAM in compact TSOP II packages who require documented timing options (CAS latency, burst lengths) and standard refresh capabilities. The IS42S16400D-6TL provides a clear, verifiable feature set for integration into memory subsystems where these specific characteristics are required.

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