IS42S16400D-6BLI-TR

The IS42S16400D-6BLI-TR is a 64‑Mbit synchronous DRAM organized as 1,048,576 × 16 × 4 banks (4M × 16) designed for 3.3V memory systems. It uses a fully synchronous pipeline architecture with LVTTL signaling and a parallel interface to support high-speed burst transfers.

Built with features such as internal bank interleaving, programmable burst lengths and sequences, and self-refresh modes, this device targets board‑level memory expansion and embedded systems that require deterministic, clocked DRAM behavior and industrial temperature operation.

Key Features

• Core Architecture Quad‑bank SDRAM organized as 1,048,576 bits × 16 × 4 banks for bank interleaving and improved throughput.
• Memory Organization 64 Mbit total capacity arranged as 4M × 16 (4 banks): 4,096 rows × 256 columns × 16 bits per bank.
• Performance Clock frequency up to 166 MHz, programmable CAS latency of 2 or 3 clocks, and support for burst read/write operations to enable high‑speed synchronous transfers.
• Burst and Access Control Programmable burst lengths (1, 2, 4, 8, full page) and selectable sequential or interleave burst sequences; random column address every clock cycle and burst termination via burst stop or precharge.
• Refresh and Power Modes Self‑refresh and auto‑refresh support with 4,096 refresh cycles every 64 ms; single 3.3V power supply operation.
• Interface and I/O LVTTL‑compatible inputs/outputs, byte control via LDQM and UDQM, and VDDQ/GNDQ supplies for DQ pins.
• Package & Temperature 60‑ball fBGA (60‑MiniBGA, 6.4 × 10.1 mm) package; industrial temperature range −40°C to 85°C. Lead‑free package option available.

Typical Applications

• Industrial systems Memory modules and controllers requiring operation across −40°C to 85°C using a 3.3V SDRAM device.
• Board-level memory expansion Designs needing a 64 Mbit parallel SDRAM in a compact 60‑MiniBGA footprint for on‑board buffering or system memory.
• Synchronous embedded designs Systems that require deterministic, clocked burst transfers, programmable CAS latency, and bank interleaving for predictable performance.

Unique Advantages

• Synchronous pipeline architecture: Enables registered, clock‑edge referenced operation for predictable timing and burst transfers.
• Quad‑bank internal organization: Hides row access and precharge cycles by interleaving banks to improve continuous access efficiency.
• Flexible burst control: Programmable burst lengths and sequences plus CAS latency options allow tuning of throughput and latency to match system requirements.
• Robust refresh and low‑power modes: Supports self‑refresh and auto‑refresh with defined refresh cycles (4,096 every 64 ms) for data retention and power management.
• Compact industrial package: 60‑MiniBGA (6.4 × 10.1 mm) offers a small board footprint with availability in a lead‑free package and industrial temperature rating.

Why Choose IS42S16400D-6BLI-TR?

The IS42S16400D-6BLI-TR provides a compact, clocked SDRAM solution that combines a 64‑Mbit capacity with quad‑bank architecture and programmable burst control. Its synchronous pipeline design and LVTTL interface make it suitable for systems where deterministic timing and burst data transfers are required.

With 3.3V single‑supply operation, selectable CAS latency, self‑refresh capability, and industrial temperature availability (−40°C to 85°C), this device is well suited to board‑level memory expansions and embedded applications that need reliable, configurable SDRAM in a small BGA package.

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