IS42S16320F-7TLI-TR

IC DRAM 512MBIT PAR 54TSOP II
Part Description

IC DRAM 512MBIT PAR 54TSOP II

Quantity 1,587 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time8 Weeks
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size512 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0028

Overview of IS42S16320F-7TLI-TR – 512 Mbit SDRAM, Parallel, 54-TSOP II

The IS42S16320F-7TLI-TR is a 512 Mbit volatile DRAM organized as 32M × 16 and implemented with SDRAM architecture. It provides a parallel memory interface and is available in a 54-TSOP II package.

Key electrical and environmental specifications include a clock frequency of 143 MHz, an access time of 5.4 ns, a supply voltage range of 3.0 V to 3.6 V, and an operating temperature range of −40°C to 85°C (TA).

Key Features

  • Memory Core  SDRAM architecture, volatile memory organized as 32M × 16 for a total capacity of 512 Mbit.
  • Performance  Rated clock frequency of 143 MHz and an access time of 5.4 ns for time-critical read/write operations.
  • Interface  Parallel memory interface suitable for standard parallel DRAM connections.
  • Power  Operates from a 3.0 V to 3.6 V supply range.
  • Package  Supplied in a 54-TSOP (0.400", 10.16 mm width) package, designated as 54-TSOP II.
  • Temperature Range  Specified for operation from −40°C to 85°C (TA).

Unique Advantages

  • High-density memory: 512 Mbit capacity (32M × 16) provides substantial on-board storage in a single device.
  • Deterministic access performance: 5.4 ns access time combined with a 143 MHz clock rating supports demanding timing requirements.
  • Standard parallel interface: Parallel DRAM interface enables integration into designs that use parallel memory architectures.
  • Compact industry-standard package: 54-TSOP II package (0.400", 10.16 mm width) simplifies board-level placement and routing for space-constrained layouts.
  • Wide operating range: −40°C to 85°C rating supports deployment across extended temperature environments.
  • 3.0–3.6 V supply compatibility: Matches common 3.3 V system power domains for straightforward power integration.

Why Choose IS42S16320F-7TLI-TR?

The IS42S16320F-7TLI-TR combines 512 Mbit SDRAM density with a parallel interface and defined timing characteristics (143 MHz clock, 5.4 ns access time), making it suitable for designs that require compact, high-capacity volatile memory in a 54-TSOP II package. Its operating voltage and temperature range are specified to align with common system power and environmental requirements.

Manufactured by ISSI (Integrated Silicon Solution Inc), this device is a factual option for engineers specifying a 32M × 16 SDRAM device where the listed electrical, thermal, and package parameters meet system requirements.

Request a quote or contact sales to obtain pricing, availability, and lead-time information for the IS42S16320F-7TLI-TR.

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