IS42S16320F-7BLI-TR

IC DRAM 512MBIT PAR 54TFBGA
Part Description

IC DRAM 512MBIT PAR 54TFBGA

Quantity 1,128 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time20 Weeks
Datasheet

Specifications & Environmental

Device Package54-TW-BGA (8x13)Memory FormatDRAMTechnologySDRAM
Memory Size512 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency143 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0028

Overview of IS42S16320F-7BLI-TR – IC DRAM 512MBIT PAR 54TFBGA

The IS42S16320F-7BLI-TR is a 512 Mbit SDRAM device organized as 32M × 16 with a parallel memory interface in a 54-TFBGA package. It operates from 3.0 V to 3.6 V, supports a clock frequency of 143 MHz with an access time of 5.4 ns, and is specified for ambient temperatures from −40°C to 85°C.

This device offers a compact BGA footprint (54-TW-BGA, 8×13) and is intended for applications that require on-board parallel DRAM storage with a 16-bit data path.

Key Features

  • Memory Core 512 Mbit SDRAM organized as 32M × 16, providing a parallel 16-bit memory array.
  • Performance Supports a clock frequency of 143 MHz and specified access time of 5.4 ns for moderate-speed memory operations.
  • Voltage Operates from 3.0 V to 3.6 V to match standard 3 V system supplies.
  • Package 54-TFBGA (54-TW-BGA, 8×13) package for compact surface-mount integration.
  • Temperature Range Rated for ambient operation from −40°C to 85°C (TA).
  • Memory Format & Interface DRAM memory format with a parallel memory interface suitable for direct memory bus integration.

Unique Advantages

  • 512 Mbit density: Provides a 32M × 16 organization to meet medium-density memory requirements without external stacking.
  • Parallel 16-bit data path: Simplifies integration into systems that use parallel memory buses and 16-bit data widths.
  • Designed performance: 143 MHz clocking and 5.4 ns access time offer predictable timing for system memory design.
  • Standard BGA footprint: 54-TFBGA (8×13) package supports compact board-level mounting and consistent assembly processes.
  • Wide supply voltage window: 3.0 V to 3.6 V operation supports common 3 V supply rails.
  • Extended operating temperature: −40°C to 85°C rating addresses a range of ambient conditions.

Why Choose IC DRAM 512MBIT PAR 54TFBGA?

The IS42S16320F-7BLI-TR from ISSI is positioned for designs that require a 512 Mbit parallel SDRAM with a 16-bit data organization, predictable timing (143 MHz clock, 5.4 ns access), and a compact 54-TFBGA package. Its supply voltage range and extended temperature rating make it suitable for systems running on standard 3 V rails across a wide ambient range.

This device is appropriate for engineers seeking a straightforward, board-mountable SDRAM solution from a known memory manufacturer for projects that need medium-density parallel DRAM integration.

Request a quote or contact sales for pricing, availability, and lead-time information for the IS42S16320F-7BLI-TR.

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