IS42S16320F-6TLI-TR
| Part Description |
IC DRAM 512MBIT PAR 54TSOP II |
|---|---|
| Quantity | 370 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Integrated Silicon Solution Inc |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 8 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 54-TSOP II | Memory Format | DRAM | Technology | SDRAM | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 5.4 ns | Grade | Industrial | ||
| Clock Frequency | 167 MHz | Voltage | 3V ~ 3.6V | Memory Type | Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 54-TSOP (0.400", 10.16mm Width) | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 32M x 16 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0028 |
Overview of IS42S16320F-6TLI-TR – 512Mbit Parallel SDRAM, 54-TSOP II
The IS42S16320F-6TLI-TR is a 512 Mbit volatile memory device implemented in SDRAM technology with a 32M × 16 organization. It provides a parallel memory interface and is offered in a 54‑lead TSOP II package.
Designed for applications that require moderate-density, high-speed parallel DRAM, this device delivers a 167 MHz clock capability, a 5.4 ns access time, and industry-relevant operating ranges for supply voltage and temperature.
Key Features
- Memory Core & Density 512 Mbit capacity organized as 32M × 16, suitable for single-package memory requirements.
- SDRAM Technology Implements SDRAM architecture for synchronous parallel memory operation.
- Performance Rated for a 167 MHz clock frequency with an access time of 5.4 ns, supporting time-sensitive memory access.
- Parallel Interface Standard parallel memory interface for direct integration into systems expecting parallel DRAM.
- Power Supply Operates from 3.0 V to 3.6 V, matching common 3 V memory power domains.
- Package & Mounting Available in a 54‑lead TSOP II package (0.400" / 10.16 mm width) for board-level mounting and space considerations.
- Operating Temperature Specified for operation from -40°C to 85°C (TA), accommodating a wide ambient range.
Typical Applications
- Parallel Memory Expansion For designs requiring a 512 Mbit volatile SDRAM with a parallel interface and 32M × 16 organization.
- Board-Level Memory Upgrades Use as a drop-in high-density DRAM option where a 54‑TSOP II package and 3.0–3.6 V supply are required.
- Temperature-Sensitive Deployments Suitable for systems that require memory operation across an ambient range of -40°C to 85°C.
Unique Advantages
- Single-Package 512 Mbit Density: Consolidates 32M × 16 memory into one 54‑TSOP II device, simplifying board layout for moderate-density needs.
- Clocked Performance Specified: 167 MHz clock rating and 5.4 ns access time provide clearly defined timing characteristics for system timing budgets.
- Wide Operating Voltage Window: 3.0–3.6 V supply range allows compatibility with common 3 V memory power rails.
- Extended Ambient Temperature Range: Specification from -40°C to 85°C supports deployment across a broad set of environmental conditions.
- Compact TSOP II Package: 54‑lead TSOP II (10.16 mm width) offers a compact footprint for board-level integration.
Why Choose IC DRAM 512MBIT PAR 54TSOP II?
The IS42S16320F-6TLI-TR delivers a defined 512 Mbit SDRAM option with explicit performance and operating specifications—32M × 16 organization, 167 MHz clock capability, 5.4 ns access time, 3.0–3.6 V supply, and -40°C to 85°C ambient range—packaged in a 54‑lead TSOP II. These concrete specifications make the device suitable for designs that require a known-performance parallel DRAM solution in a compact package.
This part is appropriate for engineers and procurement teams seeking a stable, specification-driven memory component for board-level integration where parallel SDRAM architecture, medium density, and a broad temperature and voltage operating window are required.
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