IS42S16320F-6TLI-TR

IC DRAM 512MBIT PAR 54TSOP II
Part Description

IC DRAM 512MBIT PAR 54TSOP II

Quantity 370 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time8 Weeks
Datasheet

Specifications & Environmental

Device Package54-TSOP IIMemory FormatDRAMTechnologySDRAM
Memory Size512 MbitAccess Time5.4 nsGradeIndustrial
Clock Frequency167 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging54-TSOP (0.400", 10.16mm Width)
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0028

Overview of IS42S16320F-6TLI-TR – 512Mbit Parallel SDRAM, 54-TSOP II

The IS42S16320F-6TLI-TR is a 512 Mbit volatile memory device implemented in SDRAM technology with a 32M × 16 organization. It provides a parallel memory interface and is offered in a 54‑lead TSOP II package.

Designed for applications that require moderate-density, high-speed parallel DRAM, this device delivers a 167 MHz clock capability, a 5.4 ns access time, and industry-relevant operating ranges for supply voltage and temperature.

Key Features

  • Memory Core & Density 512 Mbit capacity organized as 32M × 16, suitable for single-package memory requirements.
  • SDRAM Technology Implements SDRAM architecture for synchronous parallel memory operation.
  • Performance Rated for a 167 MHz clock frequency with an access time of 5.4 ns, supporting time-sensitive memory access.
  • Parallel Interface Standard parallel memory interface for direct integration into systems expecting parallel DRAM.
  • Power Supply Operates from 3.0 V to 3.6 V, matching common 3 V memory power domains.
  • Package & Mounting Available in a 54‑lead TSOP II package (0.400" / 10.16 mm width) for board-level mounting and space considerations.
  • Operating Temperature Specified for operation from -40°C to 85°C (TA), accommodating a wide ambient range.

Typical Applications

  • Parallel Memory Expansion For designs requiring a 512 Mbit volatile SDRAM with a parallel interface and 32M × 16 organization.
  • Board-Level Memory Upgrades Use as a drop-in high-density DRAM option where a 54‑TSOP II package and 3.0–3.6 V supply are required.
  • Temperature-Sensitive Deployments Suitable for systems that require memory operation across an ambient range of -40°C to 85°C.

Unique Advantages

  • Single-Package 512 Mbit Density: Consolidates 32M × 16 memory into one 54‑TSOP II device, simplifying board layout for moderate-density needs.
  • Clocked Performance Specified: 167 MHz clock rating and 5.4 ns access time provide clearly defined timing characteristics for system timing budgets.
  • Wide Operating Voltage Window: 3.0–3.6 V supply range allows compatibility with common 3 V memory power rails.
  • Extended Ambient Temperature Range: Specification from -40°C to 85°C supports deployment across a broad set of environmental conditions.
  • Compact TSOP II Package: 54‑lead TSOP II (10.16 mm width) offers a compact footprint for board-level integration.

Why Choose IC DRAM 512MBIT PAR 54TSOP II?

The IS42S16320F-6TLI-TR delivers a defined 512 Mbit SDRAM option with explicit performance and operating specifications—32M × 16 organization, 167 MHz clock capability, 5.4 ns access time, 3.0–3.6 V supply, and -40°C to 85°C ambient range—packaged in a 54‑lead TSOP II. These concrete specifications make the device suitable for designs that require a known-performance parallel DRAM solution in a compact package.

This part is appropriate for engineers and procurement teams seeking a stable, specification-driven memory component for board-level integration where parallel SDRAM architecture, medium density, and a broad temperature and voltage operating window are required.

Request a quote or submit a pricing inquiry to check availability and lead times for IS42S16320F-6TLI-TR.

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