 | | IS42S16320B-7BLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54WBGA | Memory | 54-WBGA (11x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: N/A | 885 | |
 | | IS42S16320B-7BLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54WBGA | Memory | 54-WBGA (11x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: N/A | 354 | |
 | | IS42S16320B-7TL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,453 | |
 | | IS42S16320B-7TL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 76 | |
 | | IS42S16320B-7TLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 262 | |
 | | IS42S16320B-7TLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 731 | |
 | | IS42S16320D-6BL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TFBGA | Memory | 54-TW-BGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: N/A | 1,272 | |
 | | IS42S16320D-6BLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TFBGA | Memory | 54-TW-BGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: N/A | 432 | |
 | | IS42S16320D-6BLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TFBGA | Memory | 54-TW-BGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: N/A | 743 | |
 | | IS42S16320D-6TL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 51 | |
 | | IS42S16320D-6TL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,298 | |
 | | IS42S16320D-6TLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 440 | |
 | | IS42S16320D-6TLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,014 | |
 | | IS42S16320D-7BL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TFBGA | Memory | 54-TW-BGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: N/A | 1,486 | |
 | | IS42S16320D-7BL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TFBGA | Memory | 54-TW-BGA (8x13) | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: N/A | 1,726 | |
 | | IS42S16320D-7BLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TFBGA | Memory | 54-TW-BGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: N/A | 1,077 | |
 | | IS42S16320D-7BLI-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TFBGA | Memory | 54-TW-BGA (8x13) | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Write Cycle Time Word Page: N/A | 122 | |
 | | IS42S16320D-7TL | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 47 | |
 | | IS42S16320D-7TL-TR | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,326 | |
 | | IS42S16320D-7TLI | Integrated Silicon Solution Inc | IC DRAM 512MBIT PAR 54TSOP II | Memory | 54-TSOP II | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Memory Interface: Parallel Memory Organization: 32M x 16 Packaging: 54-TSOP (0.400", 10.16mm Width) Write Cycle Time Word Page: N/A | 1,250 | |