IS42S16320D-7TL

The IS42S16320D-7TL is a 512 Mbit synchronous DRAM organized as 32M × 16 with a parallel memory interface and TSOP-II packaging. It implements pipeline architecture and fully synchronous operation with all signals referenced to the rising edge of the clock, delivering predictable, high-speed data transfers for systems requiring compact parallel SDRAM.

Designed for commercial-temperature systems, the device targets applications that need a 512 Mbit parallel SDRAM solution in a 54‑pin TSOP (0.400", 10.16 mm width) package while supporting programmable burst and latency control for flexible memory access patterns.

Key Features

• Core / Architecture  Fully synchronous SDRAM with pipeline architecture; all inputs and outputs referenced to the positive clock edge.
• Memory Organization & Capacity  512 Mbit capacity organized as 32M × 16, providing four internal banks for row access/precharge hiding.
• Performance  Rated for a clock frequency up to 143 MHz for the -7 speed grade with an access time from clock of 5.4 ns (CAS latency = 3).
• Timing & Burst Control  Programmable burst length (1, 2, 4, 8, full page), programmable burst sequence (sequential/interleave), and selectable CAS latency (2 or 3 clocks) for flexible timing and throughput tuning.
• Refresh & Power Management  Supports auto refresh (CBR) and self-refresh with 8K refresh cycles every 64 ms to maintain data integrity; VDD/VDDQ operating range specified between 3.0 V and 3.6 V (datasheet lists VDD/VDDQ range 2.3 V–3.6 V and S-series nominal 3.3 V).
• Interface  LVTTL-compatible interface and parallel memory interface with random column address capability every clock cycle for efficient column accesses.
• Package & Temperature  Available in a 54‑pin TSOP-II (0.400", 10.16 mm width) package and specified for commercial operating temperature range 0°C to +70°C (TA).

Typical Applications

• Parallel memory systems  Use where a 512 Mbit parallel SDRAM in a compact TSOP-II footprint is required for system memory expansion or buffering.
• High-speed data buffering  Suitable for designs that require burst read/write capability and programmable CAS latency to match system timing.
• Embedded systems with LVTTL interface  Integrates with LVTTL-parallel host interfaces for embedded controllers and processing modules operating within the commercial temperature range.

Unique Advantages

• Predictable synchronous operation: Fully synchronous design with clock-referenced I/O enables deterministic timing and easier system integration.
• Flexible throughput control: Programmable burst length/sequence and CAS latency options let designers balance latency and bandwidth for specific workloads.
• Compact package option: 54‑pin TSOP-II package (0.400", 10.16 mm width) provides a space-efficient form factor for board-level memory implementations.
• Robust refresh and self-maintenance: Auto-refresh and self-refresh support with standard 8K/64 ms refresh cycles help preserve data integrity without continuous host intervention.
• Wide supply envelope (per datasheet): Device operation aligns with standard SDRAM supply ranges; product specification lists 3.0 V–3.6 V while the datasheet references VDD/VDDQ from 2.3 V–3.6 V and S-series at 3.3 V.

Why Choose IS42S16320D-7TL?

The IS42S16320D-7TL delivers a straightforward 512 Mbit SDRAM option in a 32M × 16 organization with timing and burst flexibility suited to designs that require predictable, high-speed parallel memory. Its TSOP-II packaging and LVTTL-compatible interface make it a compact, board-friendly choice for commercial-temperature applications that need configurable latency and burst behavior.

This device is appropriate for engineers specifying a 512 Mbit parallel SDRAM with programmable timing, standard refresh support, and a narrow TSOP-II package form factor, offering a clear balance of performance and integration for long-term designs where these characteristics are required.

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