IS42S16320F-6BL

IC DRAM 512MBIT PAR 54TFBGA
Part Description

IC DRAM 512MBIT PAR 54TFBGA

Quantity 1,485 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerIntegrated Silicon Solution Inc
Manufacturing StatusActive
Manufacturer Standard Lead Time20 Weeks
Datasheet

Specifications & Environmental

Device Package54-TW-BGA (8x13)Memory FormatDRAMTechnologySDRAM
Memory Size512 MbitAccess Time5.4 nsGradeCommercial
Clock Frequency167 MHzVoltage3V ~ 3.6VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging54-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization32M x 16
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0028

Overview of IS42S16320F-6BL – 512 Mbit SDRAM (32M × 16), 54‑TFBGA

The IS42S16320F-6BL is a volatile SDRAM device providing 512 Mbit of parallel memory organized as 32M × 16. It implements a parallel DRAM interface and is offered in a 54‑TFBGA (54‑TW‑BGA 8×13) package.

With a specified clock frequency of 167 MHz, an access time of 5.4 ns, and a 3.0 V to 3.6 V supply range, this device is intended for designs that require external parallel SDRAM for temporary data storage and buffering within the listed operating temperature range of 0°C to 70°C.

Key Features

  • Memory Architecture 512 Mbit capacity organized as 32M × 16 provides a 16‑bit data path for parallel memory designs.
  • SDRAM Technology Synchronous DRAM operation supporting a specified clock frequency of 167 MHz and an access time of 5.4 ns.
  • Parallel Interface Parallel memory interface suitable for external system memory and data buffering in designs that require parallel DRAM connectivity.
  • Supply Voltage Operates from 3.0 V to 3.6 V, matching systems designed for standard 3 V class SDRAM operation.
  • Package Available in a 54‑TFBGA package (supplier device package: 54‑TW‑BGA, 8×13), supporting surface‑mount assembly.
  • Operating Temperature Rated for ambient operation from 0°C to 70°C (TA).

Typical Applications

  • Parallel External Memory — Use as a 512 Mbit parallel SDRAM device for systems that require external volatile memory with a 16‑bit data bus.
  • Data Buffering — Provides temporary data storage and buffering where a 167 MHz clock and 5.4 ns access time meet system timing requirements.
  • System Working Memory — Suitable for designs needing external SDRAM for working datasets and transient storage within the specified voltage and temperature ranges.

Unique Advantages

  • Compact 54‑TFBGA package: Enables surface‑mount integration with a small footprint (54‑TW‑BGA, 8×13) for space‑constrained PCBs.
  • Parallel 16‑bit organization: 32M × 16 architecture provides a wide data path for efficient parallel data transfers.
  • Defined timing performance: 167 MHz clock and 5.4 ns access time give concrete timing characteristics for system design and verification.
  • Standard 3.0–3.6 V supply: Compatible with common 3 V class system power rails to simplify power domain integration.
  • Specified operating range: 0°C to 70°C ambient rating aligns the device to commercial temperature applications.

Why Choose IS42S16320F-6BL?

The IS42S16320F-6BL delivers a clearly specified parallel SDRAM option—512 Mbit capacity, 32M × 16 organization, 167 MHz clocking, and 5.4 ns access time—in a compact 54‑TFBGA package. Its defined electrical and timing specifications make it straightforward to evaluate and integrate into designs that require external volatile memory with known performance and supply requirements.

This device is appropriate for designs where a parallel SDRAM implementation, a 16‑bit data interface, and a 3.0–3.6 V supply are required. Its documented package and operating range support surface‑mount assembly and commercial‑temperature deployment.

Request a quote or submit an inquiry to receive pricing and availability information for the IS42S16320F-6BL.

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